Datasheet > 2N6758

2N6758

更新时间： 2024-11-24 06:17:27

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页数	文件大小	规格书
3页	160K
描述
N-CHANNEL MOSFET

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数据手册
替代型号

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2N6758 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

N-CHANNEL MOSFET

Qualified per MIL-PRF-19500/542

DEVICES

LEVELS

2N6758

JAN

JANTX

JANTXV

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)

Parameters / Test Conditions

Drain – Source Voltage

Symbol

V_DS

Value

200

Unit

Vdc

Gate – Source Voltage

V_GS

± 20

Continuous Drain Current

I_D1

I_D2

P_tl

Adc

T_C= +25°C

T_C= +100°C

T_C= +25°C

Continuous Drain Current

Max. Power Dissipation

75 ⁽¹⁾

Drain to Source On State Resistance

Operating & Storage Temperature

R_ds(on)

0.4 ⁽²⁾

T_op, T_stg

-55 to +150

°C

Note: (1) Derated Linearly by 0.6 W/°C for T_C> +25°C

TO-204AA

(TO-3)

(2) V_GS= 10Vdc, I_D= 6A

2N6758

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted)

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Drain-Source Breakdown Voltage

V_GS= 0V, I_D= 1mAdc

V_(BR)DSS

200

Vdc

Gate-Source Voltage (Threshold)

_DS≥ V_GS, I_D= 0.25mA

V_DS≥ V_GS, I_D= 0.25mA, T_j= +125°C

_DS≥ V_GS, I_D= 0.25mA, T_j= -55°C

V_GS(th)1

V_GS(th)2

V_GS(th)3

2.0

1.0

4.0

5.0

Vdc

Gate Current

_GS= ±20V, V_DS= 0V

V_GS= ±20V, V_DS= 0V, T_j= +125°C

I_GSS1

I_GSS2

±100

±200

nAdc

Drain Current

_GS= 0V, V_DS= 160V

I_DSS1

I_DSS2

0.25

µAdc

mAdc

V_GS= 0V, V_DS= 160V, T_j= +125°C

Static Drain-Source On-State Resistance

V_GS= 10V, I_D= 6A pulsed

r_DS(on)1

r_DS(on)2

0.4

0.49

_GS= 10V, I_D= 9A pulsed

T_j= +125°C

_GS= 10V, I_D= 6A pulsed

r_DS(on)3

0.8

1.6

Diode Forward Voltage

V_GS= 0V, I_D= 9A pulsed

V_SD

Vdc

T4-LDS-0112 Rev. 2 (092088)

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2N6758 替代型号

型号	品牌	替代类型	描述	数据表
2N6756	INFINEON	功能相似	Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Met
IRF130	INFINEON	功能相似	TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.18ohm, Id=14A)

与2N6758相关器件

型号	品牌	获取价格	描述	数据表
2N6758TX	RENESAS	获取价格	9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
2N6758TXV	RENESAS	获取价格	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal
2N6759	FAIRCHILD	获取价格	N-Channel Power MOSFETs, 5.5A, 350V/400V
2N6760	MICROSEMI	获取价格	N-CHANNEL MOSFET
2N6760	SEME-LAB	获取价格	N-CHANNEL POWER MOSFET
2N6760	FAIRCHILD	获取价格	N-Channel Power MOSFETs, 5.5A, 350V/400V
2N6760	INFINEON	获取价格	400V Single N-Channel Hi-Rel MOSFET in a TO-204AA package - A 2N6760 with Hermetic Packagi
2N6760_1006	MICROSEMI	获取价格	N-CHANNEL MOSFET
2N6760PBF	INFINEON	获取价格	Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal
2N6760TX	MICROSEMI	获取价格	Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal