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IRF222 PDF预览

IRF222

更新时间: 2024-11-26 22:48:07
品牌 Logo 应用领域
英特矽尔 - INTERSIL 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
7页 72K
描述
4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs

IRF222 数据手册

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Semiconductor  
IRF220, IRF221,  
IRF222, IRF223  
4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm,  
N-Channel Power MOSFETs  
October 1997  
Features  
Description  
• 4.0A and 5.0A, 150V and 200V  
These are N-Channel enhancement mode silicon gate  
power field effect transistors. They are advanced power  
MOSFETs designed, tested, and guaranteed to withstand a  
specified level of energy in the breakdown avalanche mode  
of operation. All of these power MOSFETs are designed for  
applications such as switching regulators, switching conver-  
tors, motor drivers, relay drivers, and drivers for high power  
bipolar switching transistors requiring high speed and low  
gate drive power. These types can be operated directly from  
integrated circuits.  
• r  
DS(ON)  
= 0.8and 1.2Ω  
• SOA is Power Dissipation Limited  
• Nanosecond Switching Speeds  
• Linear Transfer Characteristics  
• High Input Impedance  
• Majority Carrier Device  
Formerly developmental type TA09600.  
• Related Literature  
- TB334 “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
Symbol  
Ordering Information  
D
S
PART NUMBER  
IRF220  
PACKAGE  
TO-204AA  
BRAND  
IRF220  
G
IRF221  
TO-204AA  
TO-204AA  
TO-204AA  
IRF221  
IRF222  
IRF223  
IRF222  
IRF223  
NOTE: When ordering, use the entire part number.  
Packaging  
JEDEC TO-204AA  
DRAIN  
(FLANGE)  
SOURCE (PIN 2)  
GATE (PIN 1)  
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.  
File Number 1567.2  
Copyright © Harris Corporation 199&  
1

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