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IRF2204STRR PDF预览

IRF2204STRR

更新时间: 2024-11-04 23:58:51
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
11页 224K
描述
TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 170A I(D) | TO-263AB

IRF2204STRR 数据手册

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PD - 94502  
AUTOMOTIVE MOSFET  
IRF2204S  
IRF2204L  
Typical Applications  
HEXFET® Power MOSFET  
Electric Power Steering  
14 Volts Automotive Electrical Systems  
D
VDSS = 40V  
Features  
Advanced Process Technology  
Ultra Low On-Resistance  
Dynamic dv/dt Rating  
175°C Operating Temperature  
Fast Switching  
R
DS(on) = 3.6mΩ  
G
ID = 170A†  
S
Repetitive Avalanche Allowed up to Tjmax  
Description  
SpecificallydesignedforAutomotiveapplications,thisHEXFET®  
Power MOSFET utilizes the lastest processing techniques to  
achieveextremelylow on-resistancepersiliconarea. Additional  
featurestothisdesignarea175°Cjunctionoperatingtemperature,  
fast switching speed and improved repetitive avalanche rating.  
These features combine to make this design an extremely  
efficient and reliable device for use in Automotive applications  
and a wide variety of other applications.  
D2Pak  
IRF2204S  
TO-262  
IRF2204L  
Absolute Maximum Ratings  
Parameter  
Max.  
170†  
120†  
850  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
A
PD @TC = 25°C  
Power Dissipation  
200  
W
W/°C  
V
Linear Derating Factor  
1.3  
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
± 20  
460  
Single Pulse Avalanche Energy‚  
Avalanche Current  
mJ  
See Fig.12a, 12b, 15, 16  
A
EAR  
TJ  
Repetitive Avalanche Energy‡  
Operating Junction and  
mJ  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting Torque, 6-32 or M3 screw  
°C  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
0.75  
Units  
RθJC  
RθJA  
°C/W  
Junction-to-Ambient  
–––  
40  
www.irf.com  
1
07/01/02  

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