Datasheet > IRF2204STRL

IRF2204STRL

更新时间： 2024-11-04 23:58:51

品牌	Logo	应用领域
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页数	文件大小	规格书
11页	224K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 40V V(BR)DSS \| 170A I(D) \| TO-263AB

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IRF2204STRL 数据手册

PD - 94502

AUTOMOTIVE MOSFET

IRF2204S

IRF2204L

Typical Applications

HEXFET^®Power MOSFET

●

Electric Power Steering

●

14 Volts Automotive Electrical Systems

V_DSS= 40V

Features

●

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

_DS(on)= 3.6mΩ

I_D= 170A

Repetitive Avalanche Allowed up to Tjmax

Description

SpecificallydesignedforAutomotiveapplications,thisHEXFET^®

Power MOSFET utilizes the lastest processing techniques to

achieveextremelylow on-resistancepersiliconarea. Additional

featurestothisdesignarea175°Cjunctionoperatingtemperature,

fast switching speed and improved repetitive avalanche rating.

These features combine to make this design an extremely

efficient and reliable device for use in Automotive applications

and a wide variety of other applications.

D²Pak

IRF2204S

TO-262

IRF2204L

Absolute Maximum Ratings

Parameter

Max.

170

120

850

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_C= 25°C

Power Dissipation

200

W/°C

Linear Derating Factor

1.3

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

460

Single Pulse Avalanche Energy

Avalanche Current

See Fig.12a, 12b, 15, 16

E_AR

T_J

Repetitive Avalanche Energy

Operating Junction and

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

0.75

Units

R_θJC

R_θJA

°C/W

Junction-to-Ambient

–––

www.irf.com

07/01/02

12 3 4 5 6 7...11

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