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IRF140 PDF预览

IRF140

更新时间: 2024-11-05 22:48:07
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
7页 147K
描述
TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.077ohm, Id=28A)

IRF140 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:FLANGE MOUNT, O-MBFM-P2Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.08
雪崩能效等级(Eas):250 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):28 A最大漏极电流 (ID):28 A
最大漏源导通电阻:0.089 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-204AEJESD-30 代码:O-MBFM-P2
JESD-609代码:e0元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):125 W
最大脉冲漏极电流 (IDM):112 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:PIN/PEG
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRF140 数据手册

 浏览型号IRF140的Datasheet PDF文件第2页浏览型号IRF140的Datasheet PDF文件第3页浏览型号IRF140的Datasheet PDF文件第4页浏览型号IRF140的Datasheet PDF文件第5页浏览型号IRF140的Datasheet PDF文件第6页浏览型号IRF140的Datasheet PDF文件第7页 
PD - 90369  
REPETITIVEAVALANCHEANDdv/dtRATED  
HEXFET TRANSISTORS  
IRF140  
100V, N-CHANNEL  
THRU-HOLE (TO-204AA/AE)  
Product Summary  
Part Number  
BVDSS  
RDS(on)  
ID  
IRF140  
100V  
0.077Ω 28A  
The HEXFET technology is the key to International  
Rectifier’s advanced line of power MOSFET transistors.  
The efficient geometry and unique processing of this latest  
“State of the Art” design achieves: very low on-state resis-  
tance combined with high transconductance; superior re-  
verse energy and diode recovery dv/dt capability.  
TO-3  
The HEXFET transistors also feature all of the well estab-  
lished advantages of MOSFETs such as voltage control,  
very fast switching, ease of paralleling and temperature  
stability of the electrical parameters.  
Features:  
n
n
n
n
n
Repetitive Avalanche Ratings  
Dynamic dv/dt Rating  
Hermetically Sealed  
Simple Drive Requirements  
Ease of Paralleling  
They are well suited for applications such as switching  
power supplies, motor controls, inverters, choppers, audio  
amplifiers and high energy pulse circuits.  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= 0V, T = 25°C  
Continuous Drain Current  
Continuous Drain Current  
Pulsed Drain Current  
Max. Power Dissipation  
Linear Derating Factor  
28  
20  
D
GS  
C
A
I
D
= 0V, T = 100°C  
C
GS  
I
112  
DM  
@ T = 25°C  
P
125  
W
W/°C  
V
D
C
1.0  
V
GS  
Gate-to-Source Voltage  
±20  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
250  
mJ  
AS  
I
28  
A
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
12.5  
5.5  
mJ  
AR  
dv/dt  
V/ns  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
Lead Temperature  
Weight  
300 (0.063 in. (1.6mm) from case for 10s)  
11.5(typical)  
For footnotes refer to the last page  
www.irf.com  
1
01/24/01  

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