Datasheet > IRF140

IRF140

更新时间： 2024-11-04 22:48:07

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
7页	59K
描述
28A, 100V, 0.077 Ohm, N-Channel Power MOSFET

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IRF140 数据手册

IRF140

Data Sheet

March 1999

File Number 2306.3

28A, 100V, 0.077 Ohm, N-Channel

Power MOSFET

Features

• 28A, 100V

• r = 0.077Ω

This N-Channel enhancement mode silicon gate power ﬁeld

effect transistor is an advanced power MOSFET designed,

tested, and guaranteed to withstand a speciﬁed level of

energy in the breakdown avalanche mode of operation. All of

these power MOSFETs are designed for applications such

as switching regulators, switching convertors, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power-Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

Formerly developmental type TA17421.

Symbol

Ordering Information

PART NUMBER

PACKAGE

BRAND

IRF140

TO-204AE

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-204AE

DRAIN

(FLANGE)

SOURCE (PIN 2)

GATE (PIN 1)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

12 3 4 5 6 7

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IRF140 替代型号

型号	品牌	替代类型	描述	数据表
IRF1404ZSTRLPBF	INFINEON	功能相似	Power Field-Effect Transistor, 75A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Me
IRF1404ZSPBF	INFINEON	功能相似	AUTOMOTIVE MOSFET
IRF130	INFINEON	功能相似	TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.18ohm, Id=14A)

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