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IRF1010ESPBF

更新时间: 2024-11-20 03:44:31
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 219K
描述
HEXFET Power MOSFET

IRF1010ESPBF 数据手册

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PD - 95444  
IRF1010ESPbF  
IRF1010ELPbF  
l Advanced Process Technology  
l Surface Mount (IRF1010ES)  
l Low-profile through-hole (IRF1010EL)  
l 175°C Operating Temperature  
l Fast Switching  
HEXFET® Power MOSFET  
D
VDSS = 60V  
l Fully Avalanche Rated  
l Lead-Free  
Description  
R
DS(on) = 12mΩ  
G
AdvancedHEXFET® PowerMOSFETsfromInternational  
Rectifier utilize advanced processing techniques to  
achieve extremely low on-resistance per silicon area.  
This benefit, combined with the fast switching speed and  
ruggedizeddevicedesignthatHEXFETpowerMOSFETs  
are well known for, provides the designer with an  
extremely efficient and reliable device for use in a wide  
variety of applications.  
ID = 84A‡  
S
The D2Pak is a surface mount power package capable of  
accommodating die sizes up to HEX-4. It provides the  
highest power capability and the lowest possible on-  
resistance in any existing surface mount package. The  
D2Pakissuitableforhighcurrentapplicationsbecauseofits  
low internal connection resistance and can dissipate up to  
2.0W in a typical surface mount application.  
D2Pak  
IRF1010ES  
TO-262  
IRF1010EL  
The through-hole version (IRF1010EL) is available for low-  
profile applications.  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
84‡  
59  
A
330  
PD @TC = 25°C  
Power Dissipation  
200  
W
W/°C  
V
Linear Derating Factor  
1.4  
VGS  
IAR  
Gate-to-Source Voltage  
± 20  
Avalanche Current  
50  
17  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
mJ  
V/ns  
4.0  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 srew  
°C  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
0.75  
40  
Units  
RθJC  
RθJA  
°C/W  
Junction-to-Ambient (PCB mount)**  
–––  
www.irf.com  
1
06/29/04  

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