是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | TO-262AA |
包装说明: | IN-LINE, R-PSIP-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | Factory Lead Time: | 1 week |
风险等级: | 5.82 | 雪崩能效等级(Eas): | 614 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 650 V |
最大漏极电流 (Abs) (ID): | 22.4 A | 最大漏极电流 (ID): | 22.4 A |
最大漏源导通电阻: | 0.15 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-262AA | JESD-30 代码: | R-PSIP-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
最低工作温度: | -55 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 195.3 W | 最大脉冲漏极电流 (IDM): | 72 A |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPI65R190C6 | INFINEON |
获取价格 |
650V CoolMOS C6 Power Transistor | |
IPI65R190C6XKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IPI65R190CFD | INFINEON |
获取价格 |
Metal Oxide Semiconduvtor Field Effect Transistor | |
IPI65R190CFDXKSA2 | INFINEON |
获取价格 |
Power Field-Effect Transistor, TO-262, I2PAK-3 | |
IPI65R190E6 | INFINEON |
获取价格 |
650V CoolMOS⢠E6 Power Transistor | |
IPI65R280C6 | INFINEON |
获取价格 |
650V CoolMOS C6 Power Transistor | |
IPI65R280E6 | INFINEON |
获取价格 |
650V CoolMOS E6 Power Transistor | |
IPI65R280E6XKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 650V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IPI65R310CFD | INFINEON |
获取价格 |
650V CoolMOS C6 CFD Power Transistor | |
IPI65R380C6 | INFINEON |
获取价格 |
650V CoolMOS C6 Power Transistor |