是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Not Recommended | 包装说明: | IN-LINE, R-PSIP-T3 |
Reach Compliance Code: | compliant | 风险等级: | 5.76 |
雪崩能效等级(Eas): | 290 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 650 V |
最大漏源导通电阻: | 0.28 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-262AA | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 39 A |
表面贴装: | NO | 端子面层: | Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPI65R310CFD | INFINEON |
获取价格 |
650V CoolMOS C6 CFD Power Transistor | |
IPI65R380C6 | INFINEON |
获取价格 |
650V CoolMOS C6 Power Transistor | |
IPI65R420CFD | INFINEON |
获取价格 |
650V CoolMOS C6 CFD Power Transistor | |
IPI65R600C6 | INFINEON |
获取价格 |
650V CoolMOS C6 Power Transistor | |
IPI65R660CFD | INFINEON |
获取价格 |
650V CoolMOS CFD Power Transistor | |
IPI70N04S3-07 | INFINEON |
获取价格 |
OptiMOS-T Power-Transistor | |
IPI70N04S4-06 | INFINEON |
获取价格 |
OptiMOS-T2 Power-Transistor | |
IPI70N10S3-12 | INFINEON |
获取价格 |
OptiMOS-T Power-Transistor | |
IPI70N10S312AKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 70A I(D), 100V, 0.0116ohm, 1-Element, N-Channel, Silicon, M | |
IPI70N10S3L-12 | INFINEON |
获取价格 |
OptiMOS-T Power-Transistor |