是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | IN-LINE, R-PSIP-T3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
Factory Lead Time: | 18 weeks | 风险等级: | 5.71 |
雪崩能效等级(Eas): | 50 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 700 V |
最大漏源导通电阻: | 0.95 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-262AA | JESD-30 代码: | R-PSIP-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最低工作温度: | -40 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 12 A |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPI77N06S3-09 | INFINEON |
获取价格 |
OptiMOS㈢-T Power-Transistor | |
IPI80CN10NG | INFINEON |
获取价格 |
OptiMOS㈢2 Power-Transistor | |
IPI80CN10NGAKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 13A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Met | |
IPI80N03S4L-03 | INFINEON |
获取价格 |
OptiMOS-T2 Power-Transistor | |
IPI80N03S4L03AKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 30V, 0.0027ohm, 1-Element, N-Channel, Silicon, Me | |
IPI80N03S4L-04 | INFINEON |
获取价格 |
OptiMOS-T2 Power-Transistor | |
IPI80N03S4L04AKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Me | |
IPI80N04S2-04 | INFINEON |
获取价格 |
OptiMOS㈢ Power-Transistor | |
IPI80N04S2-0H4 | INFINEON |
获取价格 |
OptiMOS㈢ Power-Transistor | |
IPI80N04S2-H4 | INFINEON |
获取价格 |
OptiMOS㈢ Power-Transistor |