Datasheet > IPI70P04P4-09

IPI70P04P4-09

更新时间： 2024-11-23 12:20:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	224K
描述
OptiMOS-P2 Power-Transistor

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中文翻译

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数据手册

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IPI70P04P4-09 数据手册

IPB70P04P4-09

IPI70P04P4-09, IPP70P04P4-09

OptiMOS^®-P2 Power-Transistor

Product Summary

V _DS

-40

9.1

-70

R _DS(on)(SMD Version)

I _D

Features

• P-channel - Normal Level - Enhancement mode

PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1

• AEC qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green package (RoHS compliant)

• 100% Avalanche tested

Type

Package

Marking

4P0409

IPB70P04P4-09

IPI70P04P4-09

IPP70P04P4-09

PG-TO263-3-2

PG-TO262-3-1

PG-TO220-3-1

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

T _C=25°C,

V _GS=-10V

Continuous drain current¹⁾

I _D

-72

T _C=100°C,

V _GS=-10V

-50

Pulsed drain current²⁾

I _D,pulse

E _AS

I _AS

T _C=25°C

-288

I _D=-36A

Avalanche energy, single pulse

Avalanche current, single pulse

Gate source voltage

-72

V _GS

P _tot

±20

T _C=25 °C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

Rev. 1.3

page 1

2011-02-14

12 3 4 5 6 7...9

中文翻译

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