5秒后页面跳转
IPI80N04S403AKSA1 PDF预览

IPI80N04S403AKSA1

更新时间: 2024-11-23 14:51:35
品牌 Logo 应用领域
英飞凌 - INFINEON 脉冲晶体管
页数 文件大小 规格书
9页 160K
描述
Power Field-Effect Transistor, 80A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN

IPI80N04S403AKSA1 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:IN-LINE, R-PSIP-T3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:16 weeks
风险等级:1.61Is Samacsys:N
雪崩能效等级(Eas):200 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (ID):80 A
最大漏源导通电阻:0.0037 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-262AAJESD-30 代码:R-PSIP-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):320 A
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

IPI80N04S403AKSA1 数据手册

 浏览型号IPI80N04S403AKSA1的Datasheet PDF文件第2页浏览型号IPI80N04S403AKSA1的Datasheet PDF文件第3页浏览型号IPI80N04S403AKSA1的Datasheet PDF文件第4页浏览型号IPI80N04S403AKSA1的Datasheet PDF文件第5页浏览型号IPI80N04S403AKSA1的Datasheet PDF文件第6页浏览型号IPI80N04S403AKSA1的Datasheet PDF文件第7页 
IPB80N04S4-03  
IPI80N04S4-03, IPP80N04S4-03  
OptiMOS®-T2 Power-Transistor  
Product Summary  
VDS  
40  
3.3  
80  
V
R
DS(on),max (SMD version)  
m  
A
I D  
Features  
• N-channel - Enhancement mode  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
• AEC qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green Product (RoHS compliant)  
• 100% Avalanche tested  
Type  
Package  
Marking  
4N0403  
4N0403  
4N0403  
IPB80N04S4-03  
IPI80N04S4-03  
IPP80N04S4-03  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
Continuous drain current1)  
I D  
T C=25°C, VGS=10V  
80  
80  
A
T C=100°C, VGS=10V2)  
Pulsed drain current2)  
I D,pulse  
EAS  
I AS  
T C=25°C  
320  
200  
80  
Avalanche energy, single pulse2)  
Avalanche current, single pulse  
Gate source voltage  
I D=40A  
mJ  
A
-
VGS  
Ptot  
-
±20  
94  
V
T C=25°C  
Power dissipation  
W
T j, T stg  
-
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-
-
-55 ... +175  
55/175/56  
°C  
Rev. 1.0  
page 1  
2010-04-13  

与IPI80N04S403AKSA1相关器件

型号 品牌 获取价格 描述 数据表
IPI80N04S4-04 INFINEON

获取价格

OptiMOS-T2 Power-Transistor
IPI80N04S404AKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 80A I(D), 40V, 0.0046ohm, 1-Element, N-Channel, Silicon, Me
IPI80N04S4L-04 INFINEON

获取价格

OptiMOS-T2 Power-Transistor
IPI80N04S4L04AKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 80A I(D), 40V, 0.0043ohm, 1-Element, N-Channel, Silicon, Me
IPI80N06S2-07 INFINEON

获取价格

OptiMOS Power-Transistor
IPI80N06S207AKSA2 INFINEON

获取价格

Power Field-Effect Transistor, 80A I(D), 55V, 0.0066ohm, 1-Element, N-Channel, Silicon, Me
IPI80N06S2-08 INFINEON

获取价格

OptiMOS Power-Transistor
IPI80N06S208AKSA2 INFINEON

获取价格

Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Met
IPI80N06S2L-05 INFINEON

获取价格

OptiMOS Power-Transistor
IPI80N06S2L05AKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 80A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Met