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IPI80N04S4-04 PDF预览

IPI80N04S4-04

更新时间: 2024-11-23 11:08:47
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 162K
描述
OptiMOS-T2 Power-Transistor

IPI80N04S4-04 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-262AA
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.25雪崩能效等级(Eas):100 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:40 V
最大漏极电流 (Abs) (ID):80 A最大漏极电流 (ID):80 A
最大漏源导通电阻:0.0046 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-262AAJESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):71 W
最大脉冲漏极电流 (IDM):320 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

IPI80N04S4-04 数据手册

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IPB80N04S4-04  
IPI80N04S4-04, IPP80N04S4-04  
OptiMOS®-T2 Power-Transistor  
Product Summary  
VDS  
40  
4.2  
80  
V
R
DS(on),max (SMD version)  
m  
A
I D  
Features  
• N-channel - Enhancement mode  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
• AEC qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green Product (RoHS compliant)  
• 100% Avalanche tested  
Type  
Package  
Marking  
4N0404  
4N0404  
4N0404  
IPB80N04S4-04  
IPI80N04S4-04  
IPP80N04S4-04  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
Continuous drain current1)  
I D  
T C=25°C, VGS=10V  
80  
80  
A
T C=100°C, VGS=10V2)  
Pulsed drain current2)  
I D,pulse  
EAS  
T C=25°C  
320  
100  
80  
Avalanche energy, single pulse2)  
Avalanche current, single pulse  
Gate source voltage  
I D=40A  
mJ  
A
I AS  
-
VGS  
-
±20  
71  
V
Ptot  
T C=25°C  
Power dissipation  
W
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-
-
-55 ... +175  
55/175/56  
°C  
Rev. 1.0  
page 1  
2010-04-06  

IPI80N04S4-04 替代型号

型号 品牌 替代类型 描述 数据表
IPI80N04S3-04 INFINEON

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OptiMOS-T Power-Transistor

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