是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | TO-262AA |
包装说明: | IN-LINE, R-PSIP-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.25 | 雪崩能效等级(Eas): | 100 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 40 V |
最大漏极电流 (Abs) (ID): | 80 A | 最大漏极电流 (ID): | 80 A |
最大漏源导通电阻: | 0.0046 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-262AA | JESD-30 代码: | R-PSIP-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 71 W |
最大脉冲漏极电流 (IDM): | 320 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IPI80N04S3-04 | INFINEON |
类似代替 |
OptiMOS-T Power-Transistor |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPI80N04S404AKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 40V, 0.0046ohm, 1-Element, N-Channel, Silicon, Me | |
IPI80N04S4L-04 | INFINEON |
获取价格 |
OptiMOS-T2 Power-Transistor | |
IPI80N04S4L04AKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 40V, 0.0043ohm, 1-Element, N-Channel, Silicon, Me | |
IPI80N06S2-07 | INFINEON |
获取价格 |
OptiMOS Power-Transistor | |
IPI80N06S207AKSA2 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 55V, 0.0066ohm, 1-Element, N-Channel, Silicon, Me | |
IPI80N06S2-08 | INFINEON |
获取价格 |
OptiMOS Power-Transistor | |
IPI80N06S208AKSA2 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Met | |
IPI80N06S2L-05 | INFINEON |
获取价格 |
OptiMOS Power-Transistor | |
IPI80N06S2L05AKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Met | |
IPI80N06S2L05AKSA2 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Met |