是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-262AA | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.23 |
Is Samacsys: | N | 其他特性: | LOGIC LEVEL COMPATIBLE |
雪崩能效等级(Eas): | 345 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 55 V | 最大漏极电流 (Abs) (ID): | 80 A |
最大漏极电流 (ID): | 80 A | 最大漏源导通电阻: | 0.008 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-262AA |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 165 W | 最大脉冲漏极电流 (IDM): | 320 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | MATTE TIN |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPI80N06S3L-06 | INFINEON |
获取价格 |
OptiMOS㈢-T Power-Transistor | |
IPI80N06S3L-08 | INFINEON |
获取价格 |
OptiMOS㈢-T Power-Transistor | |
IPI80N06S3L08AKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 55V, 0.0079ohm, 1-Element, N-Channel, Silicon, Me | |
IPI80N06S4-05 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 60V, 0.0057ohm, 1-Element, N-Channel, Silicon, Me | |
IPI80N06S4-07 | INFINEON |
获取价格 |
OptiMOS-T2 Power-Transistor | |
IPI80N06S407AKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 60V, 0.0071ohm, 1-Element, N-Channel, Silicon, Me | |
IPI80N06S407AKSA2 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 60V, 0.0071ohm, 1-Element, N-Channel, Silicon, Me | |
IPI80N06S4L-05 | INFINEON |
获取价格 |
OptiMOS-T2 Power-Transistor | |
IPI80N06S4L05AKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 60V, 0.0048ohm, 1-Element, N-Channel, Silicon, Me | |
IPI80N06S4L05AKSA2 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 60V, 0.0048ohm, 1-Element, N-Channel, Silicon, Me |