是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | IN-LINE, R-PSIP-T3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.82 |
其他特性: | LOGIC LEVEL COMPATIBLE | 雪崩能效等级(Eas): | 135 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 80 A | 最大漏源导通电阻: | 0.0072 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-262AA |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | P-CHANNEL |
最大脉冲漏极电流 (IDM): | 320 A | 表面贴装: | NO |
端子面层: | Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPI80P04P4-05 | INFINEON |
获取价格 |
OptiMOS-P2 Power-Transistor | |
IPI80P04P405AKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 40V, 0.0052ohm, 1-Element, P-Channel, Silicon, Me | |
IPI80P04P4-07 | INFINEON |
获取价格 |
OptiMOS-P2 Power-Transistor | |
IPI80P04P407AKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 40V, 0.0077ohm, 1-Element, P-Channel, Silicon, Me | |
IPI80P04P407XK | INFINEON |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 40V, 0.0077ohm, 1-Element, P-Channel, Silicon, Me | |
IPI80P04P4L-04 | INFINEON |
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OptiMOS-P2 Power-Transistor | |
IPI80P04P4L04AKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 40V, 0.0071ohm, 1-Element, P-Channel, Silicon, Me | |
IPI80P04P4L-06 | INFINEON |
获取价格 |
OptiMOS-P2 Power-Transistor | |
IPI80P04P4L-08 | INFINEON |
获取价格 |
OptiMOS-P2 Power-Transistor | |
IPI80P04P4L08AKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, |