Datasheet > IPI90R1K2C3XKSA2

IPI90R1K2C3XKSA2

更新时间： 2024-09-29 20:02:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	260K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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IPI90R1K2C3XKSA2 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.76	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

IPI90R1K2C3XKSA2 数据手册

IPI90R1K2C3

CoolMOS^™Power Transistor

Features

Product Summary

_DS@ T _J=25°C

900

1.2

• Lowest figure-of-merit R_ONx Q_g

• Extreme dv/dt rated

_DS(on),max@T _J=25°C

Ω

Q _g,typ

• High peak current capability

• Qualified according to JEDEC¹⁾for target applications

• Pb-free lead plating; RoHS compliant

• Ultra low gate charge

PG-TO262

CoolMOS™ 900V is designed for:

• Quasi Resonant Flyback / Forward topologies

• PC Silverbox and consumer applications

• Industrial SMPS

Type

Package

Marking

IPI90R1K2C3

PG-TO262

9R1K2C

Maximum ratings, at T _J=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

T _C=100 °C

T _C=25 °C

5.1

3.2

Continuous drain current

I _D,pulse

E _AS

Pulsed drain current

I _D=0.92 A, V _DD=50 V

Avalanche energy, single pulse

Avalanche energy, repetitive t _AR

Avalanche current, repetitive t _AR

MOSFET dv /dt ruggedness

Gate source voltage

2),3)

E _AR

0.31

0.92

I _AR

_DS=0...400 V

dv /dt

V _GS

V/ns

±20

static

±30

AC (f>1 Hz)

T _C=25 °C

P _tot

Power dissipation

T _J, T _stg

-55 ... 150

Operating and storage temperature

°C

Rev. 1.0

page 1

2008-07-29

12 3 4 5 6 7...10

中文翻译

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