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IPI90R1K2C3XKSA1 PDF预览

IPI90R1K2C3XKSA1

更新时间: 2024-09-29 14:51:35
品牌 Logo 应用领域
英飞凌 - INFINEON 脉冲晶体管
页数 文件大小 规格书
10页 261K
描述
Power Field-Effect Transistor, 5.1A I(D), 900V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN

IPI90R1K2C3XKSA1 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:TO-262AA
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:2.26Is Samacsys:N
雪崩能效等级(Eas):68 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:900 V最大漏极电流 (ID):5.1 A
最大漏源导通电阻:1.2 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-262AAJESD-30 代码:R-PSIP-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):10 A认证状态:Not Qualified
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

IPI90R1K2C3XKSA1 数据手册

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IPI90R1K2C3  
CoolMOSPower Transistor  
Features  
Product Summary  
V
R
DS @ T J=25°C  
900  
1.2  
28  
V
• Lowest figure-of-merit RON x Qg  
• Extreme dv/dt rated  
DS(on),max @T J=25°C  
Q g,typ  
nC  
• High peak current capability  
• Qualified according to JEDEC1) for target applications  
• Pb-free lead plating; RoHS compliant  
• Ultra low gate charge  
PG-TO262  
CoolMOS™ 900V is designed for:  
• Quasi Resonant Flyback / Forward topologies  
• PC Silverbox and consumer applications  
• Industrial SMPS  
Type  
Package  
Marking  
IPI90R1K2C3  
PG-TO262  
9R1K2C  
Maximum ratings, at T J=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
T C=25 °C  
T C=100 °C  
T C=25 °C  
5.1  
3.2  
Continuous drain current  
A
2)  
10  
I D,pulse  
E AS  
Pulsed drain current  
I D=0.92 A, V DD=50 V  
I D=0.92 A, V DD=50 V  
Avalanche energy, single pulse  
Avalanche energy, repetitive t AR  
Avalanche current, repetitive t AR  
MOSFET dv /dt ruggedness  
Gate source voltage  
68  
mJ  
2),3)  
2),3)  
E AR  
0.31  
0.92  
50  
I AR  
A
V
DS=0...400 V  
dv /dt  
V GS  
V/ns  
V
±20  
static  
±30  
AC (f>1 Hz)  
T C=25 °C  
P tot  
83  
Power dissipation  
W
T J, T stg  
-55 ... 150  
Operating and storage temperature  
°C  
Rev. 1.0  
page 1  
2008-07-29  

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