是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
Factory Lead Time: | 1 week | 风险等级: | 5.82 |
其他特性: | LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | 雪崩能效等级(Eas): | 280 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 55 V |
最大漏极电流 (ID): | 80 A | 最大漏源导通电阻: | 0.0147 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-262AA |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 320 A | 表面贴装: | NO |
端子面层: | Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPI80N06S3-05 | INFINEON |
获取价格 |
OptiMOS-T2 Power-Transistor | |
IPI80N06S3-07 | INFINEON |
获取价格 |
OptiMOS-T Power-Transistor | |
IPI80N06S3L-05 | INFINEON |
获取价格 |
OptiMOS-T2 Power-Transistor | |
IPI80N06S3L-06 | INFINEON |
获取价格 |
OptiMOS㈢-T Power-Transistor | |
IPI80N06S3L-08 | INFINEON |
获取价格 |
OptiMOS㈢-T Power-Transistor | |
IPI80N06S3L08AKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 55V, 0.0079ohm, 1-Element, N-Channel, Silicon, Me | |
IPI80N06S4-05 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 60V, 0.0057ohm, 1-Element, N-Channel, Silicon, Me | |
IPI80N06S4-07 | INFINEON |
获取价格 |
OptiMOS-T2 Power-Transistor | |
IPI80N06S407AKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 60V, 0.0071ohm, 1-Element, N-Channel, Silicon, Me | |
IPI80N06S407AKSA2 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 60V, 0.0071ohm, 1-Element, N-Channel, Silicon, Me |