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IPI80N06S2L11AKSA2 PDF预览

IPI80N06S2L11AKSA2

更新时间: 2024-11-26 20:37:07
品牌 Logo 应用领域
英飞凌 - INFINEON 脉冲晶体管
页数 文件大小 规格书
8页 135K
描述
Power Field-Effect Transistor, 80A I(D), 55V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN

IPI80N06S2L11AKSA2 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:1 week风险等级:5.82
其他特性:LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE雪崩能效等级(Eas):280 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:55 V
最大漏极电流 (ID):80 A最大漏源导通电阻:0.0147 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-262AA
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):320 A表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

IPI80N06S2L11AKSA2 数据手册

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IPB80N06S2L-11  
IPP80N06S2L-11, IPI80N06S2L-11  
OptiMOS® Power-Transistor  
Product Summary  
Features  
V DS  
55  
10.7  
80  
V
• N-channel Logic Level - Enhancement mode  
R DS(on),max (SMD version)  
mW  
A
• Automotive AEC Q101 qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
I D  
PG-TO263-3-2  
PG-TO220-3-1  
PG-TO262-3-1  
Green package (lead free)  
• Ultra low Rds(on)  
• 100% Avalanche tested  
Type  
Package  
Ordering Code Marking  
IPB80N06S2L-11  
IPP80N06S2L-11  
IPI80N06S2L-11  
PG-TO263-3-2  
PG-TO220-3-1  
PG-TO262-3-1  
SP0002-18177  
SP0002-18175  
SP0002-18176  
2N06L11  
2N06L11  
2N06L11  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
Continuous drain current1)  
I D  
T C=25 °C, V GS=10 V  
80  
A
T C=100 °C,  
V GS=10 V2)  
58  
Pulsed drain current2)  
I D,pulse  
E AS  
T C=25 °C  
I D=80A  
320  
280  
Avalanche energy, single pulse2)  
Gate source voltage4)  
mJ  
V
V GS  
±20  
P tot  
T C=25 °C  
Power dissipation  
158  
W
°C  
T j, T stg  
Operating and storage temperature  
-55 ... +175  
Rev. 1.1  
page 1  
2010-10-26  

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