Datasheet > IPI80N04S2H4AKSA1

IPI80N04S2H4AKSA1

更新时间： 2024-11-23 20:00:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	186K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册
替代型号

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IPI80N04S2H4AKSA1 技术参数

生命周期：	Obsolete	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.65
Base Number Matches：	1

IPI80N04S2H4AKSA1 数据手册

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IPB80N04S2-H4

IPP80N04S2-H4, IPI80N04S2-H4

OptiMOS^®Power-Transistor

Product Summary

V_DS

3.7

_DS(on),max(SMD version)

mΩ

I _D

Features

• N-channel - Enhancement mode

PG-TO263-3-2

PG-TO262-3-1

PG-TO220-3-1

• Automotive AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Ultra low Rds(on)

• 100% Avalanche tested

• Green product (RoHS compliant)

Type

Package

Marking

2N04H4

IPB80N04S2-H4

IPP80N04S2-H4

IPI80N04S2-0H4

PG-TO263-3-2

PG-TO220-3-1

PG-TO262-3-1

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

Continuous drain current¹⁾

I _D

T _C=25 °C, V_GS=10 V

T _C=100 °C,

_GS=10 V²⁾

Pulsed drain current²⁾

I _D,pulse

E_AS

T _C=25 °C

I _D=80A

320

660

±20

300

Avalanche energy, single pulse

Gate source voltage

V_GS

P_tot

T _C=25 °C

Power dissipation

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

°C

Rev. 1.1

page 1

2008-02-22

12 3 4 5 6 7...9

中文翻译

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IPI80N04S2H4AKSA1 替代型号

型号	品牌	替代类型	描述	数据表
IPI80N04S2H4AKSA2	INFINEON	完全替代	Power Field-Effect Transistor, 80A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Met

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