Datasheet > IPI70N10S3L-12

IPI70N10S3L-12

更新时间： 2024-11-23 11:08:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
9页	188K
描述
OptiMOS-T Power-Transistor

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数据手册
替代型号

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IPI70N10S3L-12 数据手册

IPB70N10S3L-12

IPI70N10S3L-12, IPP70N10S3L-12

OptiMOS^®-T Power-Transistor

Product Summary

V_DS

100

_DS(on),max(SMD version)

mΩ

I _D

Features

• N-channel - Enhancement mode

PG-TO263-3-2

PG-TO262-3-1

PG-TO220-3-1

• Automotive AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green product (RoHS compliant)

• 100% Avalanche tested

Type

Package

Marking

IPB70N10S3L-12

IPI70N10S3L-12

IPP70N10S3L-12

PG-TO263-3-2

PG-TO262-3-1

PG-TO220-3-1

3N10L12

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

I _D

T _C=25 °C, V_GS=10 V

T _C=100 °C,

Continuous drain current

_GS=10 V¹⁾

Pulsed drain current¹⁾

Avalanche energy, single pulse¹⁾

I _D,pulse

E_AS

T _C=25 °C

I _D=35A

280

410

I _AS

Avalanche current, single pulse

Gate source voltage²⁾

V_GS

±20

125

P_tot

T _C=25 °C

Power dissipation

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

°C

Rev. 1.0

page 1

2008-04-21

12 3 4 5 6 7...9

中文翻译

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IPI70N10S3L-12 替代型号

型号	品牌	替代类型	描述	数据表
IPP70N10S3L-12	INFINEON	完全替代	OptiMOS-T Power-Transistor
IPI70N10S3L12AKSA1	INFINEON	类似代替	Power Field-Effect Transistor, 70A I(D), 100V, 0.0123ohm, 1-Element, N-Channel, Silicon, M

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