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IPD90N03S4L-03_10 PDF预览

IPD90N03S4L-03_10

更新时间: 2024-11-18 11:08:47
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 159K
描述
OptiMOS-T2 Power-Transistor

IPD90N03S4L-03_10 数据手册

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IPD90N03S4L-03  
OptiMOS®-T2 Power-Transistor  
Product Summary  
VDS  
30  
3.3  
90  
V
R DS(on),max  
I D  
m  
A
Features  
• N-channel - Enhancement mode  
PG-TO252-3-11  
• Automotive AEC Q101 qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green product (RoHS compliant)  
• 100% Avalanche tested  
Type  
Package  
Marking  
IPD90N03S4L-03  
PG-TO252-3-11 4N03L03  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
Continuous drain current1)  
I D  
T C=25 °C, VGS=10 V  
T C=100 °C,  
90  
A
90  
V
GS=10 V2)  
Pulsed drain current2)  
I D,pulse  
EAS  
I AS  
T C=25 °C  
360  
85  
I D=90 A  
Avalanche energy, single pulse  
Avalanche current, single pulse  
Gate source voltage  
mJ  
A
T C=25 °C  
90  
VGS  
Ptot  
-
±16  
V
T C=25 °C  
Power dissipation  
94  
W
°C  
T j, T stg  
-
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-
-
-55 ... +175  
55/175/56  
Rev. 2.1  
page 1  
2010-03-08  

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