Datasheet > IPD90N06S4-07

IPD90N06S4-07

更新时间： 2024-11-18 05:39:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	165K
描述
OptiMOS-T2 Power-Transistor

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中文翻译

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数据手册

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IPD90N06S4-07 数据手册

IPD90N06S4-07

OptiMOS^®-T2 Power-Transistor

Product Summary

V_DS

6.9

R _DS(on),max

I _D

mΩ

Features

• N-channel - Enhancement mode

PG-TO252-3-11

• AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

• Ultra Low R_DSon

Type

Package

Marking

IPD90N04S6-07

PG-TO252-3-11 4N0607

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

I _D

T _C=25°C, V_GS=10V

Continuous drain current

T _C=100°C, V_GS=10V²⁾

Pulsed drain current¹⁾

I _D,pulse

E_AS

I _AS

T _C=25°C

360

Avalanche energy, single pulse¹⁾

Avalanche current, single pulse

Gate source voltage

I _D=45A

V_GS

P_tot

±20

T _C=25°C

Power dissipation

°C

−

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

Rev. 1.0

page 1

2009-03-24

12 3 4 5 6 7...9

中文翻译

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