Datasheet > IPD90N10S4-06

IPD90N10S4-06

更新时间： 2024-11-06 14:56:55

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	925K
描述
? 仿真/SPICE 型号

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IPD90N10S4-06 数据手册

IPD90N10S4-06

OptiMOS^TM-T2 Power-Transistor

Product Summary

V_DS

100

6.7

R_DS(on),max

I_D

Features

• N-channel - Normal Level - Enhancement mode

PG-TO252-3-313

• AEC Q101 qualified

TAB

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• RoHS compliant

• 100% Avalanche tested

Type

Package

Marking

IPD90N10S4-06

PG-TO252-3-313 4N1006

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

Continuous drain current¹⁾

I _D

T _C=25°C, V _GS=10V

T _C=100°C, V _GS=10V²⁾

Pulsed drain current²⁾

I _D,pulse

E _AS

T _C=25°C

360

250

Avalanche energy, single pulse²⁾

Avalanche current, single pulse

Gate source voltage

I _D=45A

I _AS

V _GS

±20

P _tot

T _C=25°C

Power dissipation

136

°C

T _j, T _stg

Operating and storage temperature

-55 ... +175

Rev. 1.1

page 1

2023-01-30

12 3 4 5 6 7...9

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