Datasheet > IPD90P04P4L04ATMA2

IPD90P04P4L04ATMA2

更新时间： 2024-01-15 19:51:48

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	280K
描述
Power Field-Effect Transistor,

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技术参数
数据手册

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IPD90P04P4L04ATMA2 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	Factory Lead Time：	16 weeks
风险等级：	5.65	湿度敏感等级：	1
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

IPD90P04P4L04ATMA2 数据手册

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IPD90P04P4L-04

OptiMOS^®-P2 Power-Transistor

Product Summary

V_DS

R_DS(on)

I_D

-40

4.3

-90

Features

• P-channel - Logic Level - Enhancement mode

• AEC qualified

PG-TO252-3-313

Tab

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green package (RoHS compliant)

• 100% Avalanche tested

Source

pin 3

Gate

pin 1

Type

Package

Marking

Drain

pin 2/Tab

IPD90P04P4L-04

PG-TO252-3-313 4P04L04

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

T _C=25°C,

V_GS=-10V

Continuous drain current¹⁾

I _D

-90

T _C=100°C,

V_GS=-10V²⁾

-90

Pulsed drain current²⁾

I _D,pulse

E_AS

I _AS

T _C=25°C

-360

Avalanche energy, single pulse²⁾

Avalanche current, single pulse

Gate source voltage

I _D=-45A

-90

V_GS

P_tot

+5/-16

125

T _C=25 °C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

Rev. 1.2

page 1

2019-07-04

12 3 4 5 6 7...9

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