是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | TO-252 |
包装说明: | GREEN, PLASTIC PACKAGE-3 | 针数: | 4 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
风险等级: | 5.24 | 其他特性: | LOGIC LEVEL COMPATIBLE |
雪崩能效等级(Eas): | 60 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 40 V |
最大漏极电流 (Abs) (ID): | 90 A | 最大漏极电流 (ID): | 90 A |
最大漏源导通电阻: | 0.0043 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-252 | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 125 W |
最大脉冲漏极电流 (IDM): | 360 A | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPD90P04P4L04ATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 90A I(D), 40V, 0.0043ohm, 1-Element, P-Channel, Silicon, Me |
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IPD90P04P4L04ATMA2 | INFINEON |
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Power Field-Effect Transistor, |
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IPD90R1K2C3 | INFINEON |
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CoolMOS Power Transistor |
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IPD90R1K2C3BT | INFINEON |
获取价格 |
暂无描述 |
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IPD90R1K2C3BTMA1 | INFINEON |
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Power Field-Effect Transistor, 5.1A I(D), 900V, 1.2ohm, 1-Element, N-Channel, Silicon, Met |
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IPD95R1K2P7 | INFINEON |
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Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest |
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IPD95R2K0P7 | INFINEON |
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Designed to meet the growing consumer needs i |
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IPD95R2K0P7ATMA1 | INFINEON |
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Power Field-Effect Transistor, |
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IPD95R450P7 | INFINEON |
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Designed to meet the growing consumer needs i |
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IPD95R450PFD7 | INFINEON |
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The 950 V CoolMOS™ PFD7 superjunction MOSFET |
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