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IPD90P04P4L-04 PDF预览

IPD90P04P4L-04

更新时间: 2024-11-05 11:08:47
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 153K
描述
OptiMOS-P2 Power-Transistor

IPD90P04P4L-04 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-252
包装说明:GREEN, PLASTIC PACKAGE-3针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.24其他特性:LOGIC LEVEL COMPATIBLE
雪崩能效等级(Eas):60 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:40 V
最大漏极电流 (Abs) (ID):90 A最大漏极电流 (ID):90 A
最大漏源导通电阻:0.0043 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):125 W
最大脉冲漏极电流 (IDM):360 A子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

IPD90P04P4L-04 数据手册

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IPD90P04P4L-04  
OptiMOS®-P2 Power-Transistor  
Product Summary  
V DS  
R DS(on)  
I D  
-40  
4.3  
-90  
V
mW  
A
Features  
• P-channel - Logic Level - Enhancement mode  
• AEC qualified  
PG-TO252-3-313  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green package (RoHS compliant)  
• 100% Avalanche tested  
Type  
Package  
Marking  
IPD90P04P4L-04  
PG-TO252-3-313 4P04L04  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
T C=25°C,  
V GS=-10V  
Continuous drain current1)  
I D  
-90  
-90  
A
T C=100°C,  
V GS=-10V2)  
Pulsed drain current2)  
I D,pulse  
E AS  
I AS  
T C=25°C  
-360  
60  
Avalanche energy, single pulse2)  
Avalanche current, single pulse  
Gate source voltage  
I D=-45A  
mJ  
A
-
-90  
±163)  
125  
V GS  
P tot  
-
V
T C=25 °C  
Power dissipation  
W
°C  
T j, T stg  
-
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-
-
-55 ... +175  
55/175/56  
Rev. 1.0  
page 1  
2011-04-27  

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