5秒后页面跳转
IPD50N03S2-07 PDF预览

IPD50N03S2-07

更新时间: 2024-11-18 05:39:23
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 152K
描述
OptiMOS Power-Transistor

IPD50N03S2-07 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-252
包装说明:GREEN, PLASTIC PACKAGE-3针数:4
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:1 week风险等级:1.65
雪崩能效等级(Eas):250 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):50 A最大漏极电流 (ID):50 A
最大漏源导通电阻:0.0073 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):136 W最大脉冲漏极电流 (IDM):200 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

IPD50N03S2-07 数据手册

 浏览型号IPD50N03S2-07的Datasheet PDF文件第2页浏览型号IPD50N03S2-07的Datasheet PDF文件第3页浏览型号IPD50N03S2-07的Datasheet PDF文件第4页浏览型号IPD50N03S2-07的Datasheet PDF文件第5页浏览型号IPD50N03S2-07的Datasheet PDF文件第6页浏览型号IPD50N03S2-07的Datasheet PDF文件第7页 
IPD50N03S2-07  
OptiMOS® Power-Transistor  
Product Summary  
Features  
VDS  
30  
7.3  
50  
V
• N-channel - Enhancement mode  
R DS(on),max  
I D  
m  
A
• Automotive AEC Q101 qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
Green package (lead free)  
• Ultra low Rds(on)  
PG-TO252-3-11  
• 100% Avalanche tested  
Type  
Package  
Marking  
IPD50N03S2-07  
PG-TO252-3-11 PN0307  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
Continuous drain current1)  
I D  
T C=25 °C, VGS=10 V  
T C=100 °C,  
50  
A
50  
V
GS=10 V2)  
Pulsed drain current2)  
I D,pulse  
EAS  
T C=25 °C  
I D=50A  
200  
250  
Avalanche energy, single pulse  
Gate source voltage  
mJ  
V
VGS  
±20  
Ptot  
T C=25 °C  
Power dissipation  
136  
W
°C  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... +175  
55/175/56  
Rev. 1.0  
page 1  
2006-07-18  

与IPD50N03S2-07相关器件

型号 品牌 获取价格 描述 数据表
IPD50N03S207ATMA1 INFINEON

获取价格

Power Field-Effect Transistor, 50A I(D), 30V, 0.0073ohm, 1-Element, N-Channel, Silicon, Me
IPD50N03S2L-06 INFINEON

获取价格

OptiMOS Power-Transistor
IPD50N03S2L06ATMA1 INFINEON

获取价格

Power Field-Effect Transistor, 50A I(D), 30V, 0.0092ohm, 1-Element, N-Channel, Silicon, Me
IPD50N03S4L-06 INFINEON

获取价格

OptiMOS-T2 Power-Transistor
IPD50N03S4L-06_10 INFINEON

获取价格

OptiMOS-T2 Power-Transistor
IPD50N03S4L06ATMA1 INFINEON

获取价格

Power Field-Effect Transistor, 50A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Me
IPD50N04S3-08 INFINEON

获取价格

OptiMOS-T Power-Transistor
IPD50N04S3-09 INFINEON

获取价格

OptiMOS-T Power-Transistor
IPD50N04S4-08 INFINEON

获取价格

OptiMOS-T2 Power-Transistor
IPD50N04S4-10 INFINEON

获取价格

OptiMOS-T2 Power-Transistor