是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-252 | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 4 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.23 | 其他特性: | LOGIC LEVEL COMPATIBLE |
雪崩能效等级(Eas): | 130 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 55 V |
最大漏极电流 (ID): | 50 A | 最大漏源导通电阻: | 0.0126 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-252 |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 200 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPD50N06S4-09 | INFINEON |
获取价格 |
OptiMOS-T2 Power-Transistor | |
IPD50N06S409ATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Met | |
IPD50N06S409ATMA2 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Met | |
IPD50N06S4L-08 | INFINEON |
获取价格 |
OptiMOS-T2 Power-Transistor | |
IPD50N06S4L08ATMA2 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 60V, 0.0078ohm, 1-Element, N-Channel, Silicon, Me | |
IPD50N06S4L-12 | INFINEON |
获取价格 |
OptiMOS-T2 Power-Transistor | |
IPD50N06S4L12ATMA2 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Met | |
IPD50N08S4-13 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 80V, 0.0132ohm, 1-Element, N-Channel, Silicon, Me | |
IPD50N08S413ATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 80V, 0.0132ohm, 1-Element, N-Channel, Silicon, Me | |
IPD50N10S3L-16 | INFINEON |
获取价格 |
OptiMOS-T Power-Transistor |