Datasheet > IPD50N06S3L-06

IPD50N06S3L-06

更新时间： 2024-10-02 11:08:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
9页	160K
描述
OptiMOS-T Power-Transistor

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数据手册

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IPD50N06S3L-06 数据手册

IPD50N06S3L-06

OptiMOS^®-T Power-Transistor

Product Summary

V_DS

6.0

R _DS(on),max

I _D

mΩ

Features

• N-channel - Logic Level - Enhancement mode

• Automotive AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green package (RoHS compliant)

• Ultra low Rds(on)

PG-TO252-3-11

• 100% Avalanche tested

Type

Package

Marking

IPD50N06S3L-06

PG-TO252-3-11 3N06L06

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

Continuous drain current¹⁾

I _D

T _C=25 °C, V_GS=10 V

T _C=100 °C,

_GS=10 V²⁾

Pulsed drain current²⁾

Avalanche energy, single pulse²⁾

I _D,pulse

E_AS

T _C=25 °C

I _D=25 A

200

710

I _AS

Avalanche current, single pulse

Gate source voltage³⁾

V_GS

±16

P_tot

T _C=25 °C

Power dissipation

136

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

Rev. 1.2

page 1

2009-05-20

12 3 4 5 6 7...9

中文翻译

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