是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 12 weeks |
风险等级: | 1.59 | Samacsys Confidence: | 4 |
Samacsys Status: | Released | Samacsys PartID: | 807767 |
Samacsys Pin Count: | 3 | Samacsys Part Category: | MOSFET (N-Channel) |
Samacsys Package Category: | Other | Samacsys Footprint Name: | IPD50N04S4L08ATMA1-1 |
Samacsys Released Date: | 2020-04-18 16:27:14 | Is Samacsys: | N |
雪崩能效等级(Eas): | 55 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 40 V |
最大漏极电流 (ID): | 50 A | 最大漏源导通电阻: | 0.0073 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-252 |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 200 A |
参考标准: | AEC-Q101 | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPD50N06S2-14 | INFINEON |
获取价格 |
OptiMOS Power-Transistor | |
IPD50N06S2-14 | UMW |
获取价格 |
种类:N-Channel;漏源电压(Vdss):60V;持续漏极电流(Id)(在25°C时 | |
IPD50N06S214ATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 55V, 0.0144ohm, 1-Element, N-Channel, Silicon, Me | |
IPD50N06S2L-13 | INFINEON |
获取价格 |
OptiMOS Power-Transistor | |
IPD50N06S2L13ATMA2 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 55V, 0.0167ohm, 1-Element, N-Channel, Silicon, Me | |
IPD50N06S3-07 | INFINEON |
获取价格 |
OptiMOS-T Power-Transistor | |
IPD50N06S307ATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 55V, 0.0069ohm, 1-Element, N-Channel, Silicon, Me | |
IPD50N06S3-09 | INFINEON |
获取价格 |
OptiMOS-T Power-Transistor | |
IPD50N06S3-15 | INFINEON |
获取价格 |
OptiMOS-T Power-Transistor | |
IPD50N06S3L-06 | INFINEON |
获取价格 |
OptiMOS-T Power-Transistor |