Datasheet > IPD320N20N3G

IPD320N20N3G

更新时间： 2024-11-06 11:08:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	324K
描述
OptiMOSTM3 Power-Transistor

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IPD320N20N3G 数据手册

IPD320N20N3 G

OptiMOS^TM3 Power-Transistor

Product Summary

Features

V _DS

200

• N-channel, normal level

R _DS(on),max

I _D

mΩ

• Excellent gate charge x R _DS(on)product (FOM)

• Very low on-resistance R _DS(on)

• 175 °C operating temperature

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC¹⁾for target application

• Halogen-free according to IEC61249-2-21

• Ideal for high-frequency switching and synchronous rectification

Type

IPD320N20N3 G

Package

Marking

PG-TO252-3

320N20N

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

Continuous drain current

T _C=100 °C

Pulsed drain current²⁾

I _D,pulse

E _AS

T _C=25 °C

136

I _D=34 A, R _GS=25 Ω

Avalanche energy, single pulse

Gate source voltage

190

V _GS

±20

P _tot

T _C=25 °C

Power dissipation

136

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 175

55/175/56

¹⁾J-STD20 and JESD22

²⁾See figure 3

Rev. 2.2

page 1

2009-10-22

12 3 4 5 6 7...9

中文翻译

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