品牌 | Logo | 应用领域 |
英飞凌 - INFINEON | / | |
页数 | 文件大小 | 规格书 |
10页 | 912K | |
描述 | ||
OptiMOS™ P-channel MOSFETs 60V in D²PAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in normal and logic level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg. |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPD400N06NG | INFINEON |
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OptiMOS㈢ Power-Transistor | |
IPD400N06NG_08 | INFINEON |
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OptiMOS® Power-Transistor Features N-channel | |
IPD400N06NGBTMA1 | INFINEON |
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Power Field-Effect Transistor, 27A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Meta | |
IPD40DP06NM | INFINEON |
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OptiMOS™ P-channel MOSFETs 60V in DPAK packag | |
IPD40N03S4L-08 | INFINEON |
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OptiMOS-T2 Power-Transistor | |
IPD40N03S4L-08_10 | INFINEON |
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OptiMOS-T2 Power-Transistor | |
IPD40N03S4L08ATMA1 | INFINEON |
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Power Field-Effect Transistor, 40A I(D), 30V, 0.0083ohm, 1-Element, N-Channel, Silicon, Me | |
IPD42DP15LM | INFINEON |
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D²PAK 封装型 100 V OptiMOS™ P 沟道 MOSFET 是面向电池管理、 | |
IPD49CN10NG | INFINEON |
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OptiMOS㈢2 Power-Transistor | |
IPD49CN10NGBUMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 20A I(D), 100V, 0.049ohm, 1-Element, N-Channel, Silicon, Me |