Datasheet > IPD35N12S3L-24

IPD35N12S3L-24

更新时间： 2024-10-03 14:56:55

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	847K
描述
车规级MOSFET

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IPD35N12S3L-24 数据手册

IPD35N12S3L-24

OptiMOS™-T Power-Transistor

Product Summary

V_DS

120

R_DS(on),max

I_D

Features

• OptiMOS™ - power MOSFET for automotive applications

PG-TO252-3-11

• N-channel - Enhancement mode

• Automotive AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• RoHS compliant

• 100% Avalanche tested

Type

Package

Marking

IPD35N12S3L-24

PG-TO252-3-11 3N12L24

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

I _D

T _C=25°C, V_GS=10V

Continuous drain current

T _C=100°C, V_GS=10V¹⁾

Pulsed drain current¹⁾

I _D,pulse

E_AS

T _C=25°C

140

175

Avalanche energy, single pulse¹⁾

Avalanche current, single pulse

I _D=17A

I _AS

Gate source voltage³⁾

V_GS

±20

P_tot

T _C=25°C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

-55 ... +175

Rev. 1.1

page 1

2023-06-15

12 3 4 5 6 7...9

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