Datasheet > IPB036N12N3G

IPB036N12N3G

更新时间： 2024-11-05 11:08:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	238K
描述
OptiMOS?3 Power-Transistor

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IPB036N12N3G 数据手册

IPB036N12N3 G

OptiMOS^™3 Power-Transistor

Product Summary

Features

V _DS

120

3.6

• Ideal for high frequency switching and DC/DC converters

• Excellent gate charge x R _DS(on)product (FOM)

• Very low on-resistance R_DS(on)

R _DS(on),max

I _D

mΩ

180

• N-channel, normal level

• 100% avalanche tested

• Pb-free plating; RoHS compliant

• Qualified according to JEDEC¹⁾for target applications

• Halogen-free according to IEC61249-2-21

Type

IPB036N12N3 G

Package

Marking

PG-TO263-7

036N12N

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

T _C=25 °C²⁾

I _D

Continuous drain current

180

139

T _C=100 °C

Pulsed drain current²⁾

I _D,pulse

E _AS

T _C=25 °C

720

Avalanche energy, single pulse³⁾

Gate source voltage

I _D=100 A, R _GS=25 Ω

900

V _GS

±20

P _tot

T _C=25 °C

Power dissipation

300

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 175

55/175/56

¹⁾J-STD20 and JESD22

²⁾See figure 3 for more detailed information

³⁾See figure 13 for more detailed information

Rev. 2.2

page 1

2009-12-17

12 3 4 5 6 7...9

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