Datasheet > IKW40N65ES5_15

IKW40N65ES5_15

更新时间： 2024-01-26 19:54:29

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
16页	1924K
描述
high Speed soft switching IGBT with full current rated RAPID 1 diode

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IKW40N65ES5_15 数据手册

IGBT

TRENCHSTOP^TMꢀ5ꢀhighꢀSpeedꢀsoftꢀswitchingꢀIGBTꢀwithꢀfullꢀcurrentꢀratedꢀRAPIDꢀ1ꢀdiode

IKW40N65ES5

650VꢀTRENCHSTOP^TMꢀ5ꢀhighꢀspeedꢀsoftꢀswitchingꢀduopak

Dataꢀsheet

IndustrialꢀPowerꢀControl

12 3 4 5 6 7...16

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型号	品牌	获取价格	描述	数据表
IKW40N65ET7	INFINEON	获取价格	TRENCHSTOP™ IGBT7
IKW40N65F5	INFINEON	获取价格	650V DuoPack IGBT and Diode High speed switching series fifth generation
IKW40N65F5AXKSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 74A I(C), 650V V(BR)CES, N-Channel, TO-247,
IKW40N65H5	INFINEON	获取价格	650V DuoPack IGBT and Diode High speed switching series fifth generation
IKW40N65H5AXKSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 74A I(C), 650V V(BR)CES, N-Channel, TO-247,
IKW40N65RH5	INFINEON	获取价格	IGBT TRENCHSTOP™ 5;Silicon Carbide Schottky D
IKW40N65WR5	INFINEON	获取价格	Reverse conducting IGBT with monolithic body diode
IKW40N65WR5_15	INFINEON	获取价格	Reverse conducting IGBT with monolithic body diode
IKW40N65WR5_16	INFINEON	获取价格	Reverse conducting IGBT with monolithic body diode
IKW40N65WR5XKSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247,