是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.84 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 74 A | 集电极-发射极最大电压: | 650 V |
配置: | SINGLE WITH BUILT-IN DIODE | JEDEC-95代码: | TO-247 |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
参考标准: | AEC-Q101 | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 200 ns |
标称接通时间 (ton): | 30 ns | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
AIKW40N65DF5XKSA1 | INFINEON |
类似代替 |
Insulated Gate Bipolar Transistor, |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IKW40N65H5 | INFINEON |
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650V DuoPack IGBT and Diode High speed switching series fifth generation | |
IKW40N65H5AXKSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 74A I(C), 650V V(BR)CES, N-Channel, TO-247, | |
IKW40N65RH5 | INFINEON |
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IGBT TRENCHSTOP™ 5;Silicon Carbide Schottky D | |
IKW40N65WR5 | INFINEON |
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Reverse conducting IGBT with monolithic body diode | |
IKW40N65WR5_15 | INFINEON |
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Reverse conducting IGBT with monolithic body diode | |
IKW40N65WR5_16 | INFINEON |
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Reverse conducting IGBT with monolithic body diode | |
IKW40N65WR5XKSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247, | |
IKW40T12 | INFINEON |
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IGBT TRENCHSTOP™ | |
IKW40T120 | INFINEON |
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LOW LOSS DUOPACK : IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-P | |
IKW40T120XK | INFINEON |
获取价格 |
暂无描述 |