Datasheet > IKW40N65ET7

IKW40N65ET7

更新时间： 2023-09-03 20:40:17

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
19页	1652K
描述
TRENCHSTOP™ IGBT7

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中文翻译

获取价格

数据手册

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IKW40N65ET7 数据手册

IKW40N65ET7

Low Loss Duopack: IGBT 7

Low Loss Duopack: IGBT 7 with Trench and Fieldstop technology

Features

• V_CE= 650 V

• I_C= 40 A

• Very Low V_CEsat

• Low turn-oﬀ losses

• Short tail current

• Reduced EMI

• Humidity robust design

• Very sofꢀ fast recovery antiparallel diode

• Maximum junction temperature T_vjmax= 175°C

• Qualified according to JEDEC for target applications

• Pb-free lead plating; RoHS compliant

• Complete product spectrum and PSpice Models: http://www.infineon.com/igbt7/

Potential applications

• Servo Drives

• General Purpose Drives (GPD)

• Industrial UPS

• Industrial SMPS

• Energy Generation

• Solar Optimizer

• Solar String Inverter

Product validation

• Product Validation: Qualified for industrial applications according to the relevant tests of

JEDEC47/20/22

Description

Package pin definition:

• Pin C & backside - Collector

• Pin E - Emitter

• Pin G - Gate

Type

Package

Marking

IKW40N65ET7

PG-TO247-3

K40EET7

Datasheet

www.infineon.com

Please read the Important Notice and Warnings at the end of this document

1.00

2021-06-29

12 3 4 5 6 7...19

中文翻译

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与IKW40N65ET7相关器件

型号	品牌	获取价格	描述	数据表
IKW40N65F5	INFINEON	获取价格	650V DuoPack IGBT and Diode High speed switching series fifth generation
IKW40N65F5AXKSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 74A I(C), 650V V(BR)CES, N-Channel, TO-247,
IKW40N65H5	INFINEON	获取价格	650V DuoPack IGBT and Diode High speed switching series fifth generation
IKW40N65H5AXKSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 74A I(C), 650V V(BR)CES, N-Channel, TO-247,
IKW40N65RH5	INFINEON	获取价格	IGBT TRENCHSTOP™ 5;Silicon Carbide Schottky D
IKW40N65WR5	INFINEON	获取价格	Reverse conducting IGBT with monolithic body diode
IKW40N65WR5_15	INFINEON	获取价格	Reverse conducting IGBT with monolithic body diode
IKW40N65WR5_16	INFINEON	获取价格	Reverse conducting IGBT with monolithic body diode
IKW40N65WR5XKSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247,
IKW40T12	INFINEON	获取价格	IGBT TRENCHSTOP™