Datasheet > IGW40N120H3

IGW40N120H3

更新时间： 2024-11-03 00:33:03

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	1896K
描述
1200V high speed switching series third generation

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IGW40N120H3 数据手册

IGBT

HighꢀspeedꢀIGBTꢀinꢀTrenchꢀandꢀFieldstopꢀtechnology

recommendedꢀinꢀcombinationꢀwithꢀSiCꢀDiodeꢀIDH15S120

IGW40N120H3

1200Vꢀhighꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration

Dataꢀsheet

IndustrialꢀPowerꢀControl

12 3 4 5 6 7...14

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型号	品牌	获取价格	描述	数据表
IGW40N60DTP	INFINEON	获取价格	Insulated Gate Bipolar Transistor,
IGW40N60H3	INFINEON	获取价格	High speed IGBT in Trench and Fieldstop technology
IGW40N60H3FKSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247, GREEN, PLAS
IGW40N60TP	INFINEON	获取价格	IGBT TRENCHSTOP? Perf.
IGW40N60TPXKSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 67A I(C), 600V V(BR)CES, N-Channel, TO-247,
IGW40N65F5	INFINEON	获取价格	High speed 5 FAST IGBT in TRENCHSTOP 5 technology
IGW40N65F5A	INFINEON	获取价格	Insulated Gate Bipolar Transistor
IGW40N65F5AXKSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 74A I(C), 650V V(BR)CES, N-Channel, TO-247,
IGW40N65F5FKSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 74A I(C), 650V V(BR)CES, N-Channel,
IGW40N65H5	INFINEON	获取价格	High speed 5 IGBT in TRENCHSTOP 5 technology