Datasheet > IGW40N65F5A

IGW40N65F5A

更新时间： 2024-11-02 21:17:35

品牌	Logo	应用领域
英飞凌 - INFINEON		栅
页数	文件大小	规格书
14页	1843K
描述
Insulated Gate Bipolar Transistor

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IGW40N65F5A 技术参数

IGBT

Highꢀspeedꢀ5ꢀFASTꢀIGBTꢀinꢀTRENCHSTOP^TMꢀ5ꢀtechnology

IGW40N65F5A

650VꢀIGBT

Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration

Dataꢀsheet

IndustrialꢀPowerꢀControl

12 3 4 5 6 7...14

中文翻译

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型号	品牌	获取价格	描述	数据表
IGW40N65F5AXKSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 74A I(C), 650V V(BR)CES, N-Channel, TO-247,
IGW40N65F5FKSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 74A I(C), 650V V(BR)CES, N-Channel,
IGW40N65H5	INFINEON	获取价格	High speed 5 IGBT in TRENCHSTOP 5 technology
IGW40N65H5AXKSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 74A I(C), 650V V(BR)CES, N-Channel, TO-247,
IGW40T12	INFINEON	获取价格	IGBT TRENCHSTOP™
IGW40T120	INFINEON	获取价格	Low Loss IGBT in Trench and Fieldstop technology
IGW40T120_09	INFINEON	获取价格	Low Loss IGBT in TrenchStop and Fieldstop technology
IGW40T120FKSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, ROHS COM
IGW40T120XK	INFINEON	获取价格	暂无描述
IGW50N60H3	INFINEON	获取价格	600V high speed switching series third generation