Datasheet > IGW40T120_09

IGW40T120_09

更新时间： 2024-11-02 11:19:19

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
13页	352K
描述
Low Loss IGBT in TrenchStop and Fieldstop technology

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中文翻译

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数据手册

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IGW40T120_09 数据手册

IGW40T120

TrenchStop^®Series

Low Loss IGBT in TrenchStop^®and Fieldstop technology

•

Short circuit withstand time – 10µs

Designed for :

- Frequency Converters

- Uninterrupted Power Supply

•

TrenchStop^®and Fieldstop technology for 1200 V applications

offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

NPT technology offers easy parallel switching capability due to

positive temperature coefficient in V_CE(sat)

Low EMI

•

PG-TO-247-3

Low Gate Charge

Qualified according to JEDEC¹for target applications

Pb-free lead plating; RoHS compliant

Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

V_CE

I_C

V_{CE(sat),Tj=25°C}T_j,maxMarking Code

1.7V G40T120

Package

IGW40T120

1200V

40A

PG-TO-247-3

150°C

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

DC collector current

T_C= 25°C

V_CE

I_C

1200

T_C= 100°C

Pulsed collector current, t_plimited by T_jmax

Turn off safe operating area

I_Cpuls

105

_CE≤ 1200V, T_j≤ 150°C

Gate-emitter voltage

V_GE

t_SC

±20

Short circuit withstand time²⁾

µs

_GE= 15V, V_CC≤ 1200V, T_j≤ 150°C

Power dissipation

P_tot

270

T_C= 25°C

Operating junction temperature

Storage temperature

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

T_j

T_stg

-40...+150

-55...+150

260

°C

¹J-STD-020 and JESD-022

²⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

Rev. 2.4 Nov. 09

Power Semiconductors

12 3 4 5 6 7...13

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