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IGW40N60DTP PDF预览

IGW40N60DTP

更新时间: 2024-11-02 18:48:07
品牌 Logo 应用领域
英飞凌 - INFINEON
页数 文件大小 规格书
14页 1458K
描述
Insulated Gate Bipolar Transistor,

IGW40N60DTP 技术参数

生命周期:ActiveReach Compliance Code:compliant
风险等级:5.62Base Number Matches:1

IGW40N60DTP 数据手册

 浏览型号IGW40N60DTP的Datasheet PDF文件第2页浏览型号IGW40N60DTP的Datasheet PDF文件第3页浏览型号IGW40N60DTP的Datasheet PDF文件第4页浏览型号IGW40N60DTP的Datasheet PDF文件第5页浏览型号IGW40N60DTP的Datasheet PDF文件第6页浏览型号IGW40N60DTP的Datasheet PDF文件第7页 
IGBT  
TRENCHSTOPTMꢀPerformanceꢀtechnology  
IGW40N60DTP  
600VꢀIGBTꢀTRENCHSTOPTMꢀPerformanceꢀseries  
Dataꢀsheet  
IndustrialꢀPowerꢀControl  

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