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HY64SD16322B-DF85E PDF预览

HY64SD16322B-DF85E

更新时间: 2024-11-11 20:02:07
品牌 Logo 应用领域
海力士 - HYNIX /
页数 文件大小 规格书
13页 483K
描述
Pseudo Static RAM, 2MX16, 85ns, CMOS, PBGA48, 6 X 8 MM, FBGA-48

HY64SD16322B-DF85E 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:TFBGA,针数:48
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.84
Base Number Matches:1

HY64SD16322B-DF85E 数据手册

 浏览型号HY64SD16322B-DF85E的Datasheet PDF文件第2页浏览型号HY64SD16322B-DF85E的Datasheet PDF文件第3页浏览型号HY64SD16322B-DF85E的Datasheet PDF文件第4页浏览型号HY64SD16322B-DF85E的Datasheet PDF文件第5页浏览型号HY64SD16322B-DF85E的Datasheet PDF文件第6页浏览型号HY64SD16322B-DF85E的Datasheet PDF文件第7页 
HY64SD16322B-DF Series  
Document Title  
2Mx16 bit Low Low Power 1T/1C Pseudo SRAM  
Revision History  
Revision No.  
History  
Draft Date  
Remark  
0.0  
Initial Draft  
Jan. 2004  
Preliminary  
Addition : Power-up timing diagram  
(page 06)  
1.0  
Apr. 2005  
Preliminary  
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any  
responsibility for use of circuits described. No patent licenses are implied.  
Rev. 0.1 / Apr. 2005  
1

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