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HY64UD16322M-DF70I PDF预览

HY64UD16322M-DF70I

更新时间: 2024-02-15 18:20:01
品牌 Logo 应用领域
海力士 - HYNIX 存储内存集成电路静态存储器
页数 文件大小 规格书
11页 350K
描述
2M x 16 bit Low Low Power 1T/1C Pseudo SRAM

HY64UD16322M-DF70I 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:BGA
包装说明:FBGA-48针数:48
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.92
Is Samacsys:N最长访问时间:70 ns
I/O 类型:COMMONJESD-30 代码:R-PBGA-B48
长度:8 mm内存密度:33554432 bit
内存集成电路类型:PSEUDO STATIC RAM内存宽度:16
功能数量:1端子数量:48
字数:2097152 words字数代码:2000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:2MX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装等效代码:BGA48,6X8,30
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3 V认证状态:Not Qualified
座面最大高度:1.1 mm最大待机电流:0.000002 A
子类别:Other Memory ICs最大压摆率:0.025 mA
最大供电电压 (Vsup):3.3 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:BALL端子节距:0.75 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7 mmBase Number Matches:1

HY64UD16322M-DF70I 数据手册

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HY64UD16322M Series  
Document Title  
2M x 16 bit Low Low Power 1T/1C Pseudo SRAM  
Revision history  
Revision No. History  
Draft Date Remark  
1.0  
1.1  
Initial  
Jan. 04. ’ 01  
Jul. 03. ’ 01  
Preliminary  
Preliminary  
Revised  
- Change Pin Connection  
- Improve tOE from 45ns to 30ns  
- Correct State Diagram  
1.2  
1.3  
Revised  
Jul. 18. ’ 01  
Oct. 06. ’ 01  
Preliminary  
Preliminary  
- Correct Package Dimension  
- Change Absolute Maximum Ratings  
Revised  
• DC Electrical Characteristics (ISB1,IDPD,ICC1)  
• State Diagram  
• Power Up Sequence  
• Deep Power Down Sequence  
• Read/Write Cycle Note  
• Release standby current from 100mA to 120mA  
Revised  
1.4  
1.5  
Nov. 07. ’ 01  
Dec. 20. ‘ 01  
Preliminary  
Preliminary  
• DC Electrical Characteristics (ICC1: 3mA -> 5mA)  
Revised  
• Add 70ns Part  
• Power Up Sequence  
1.6  
Revised  
Feb. 27. ‘ 02  
Preliminary  
- Improve ICC2@70ns 30mA to 25mA  
- Improve ICC2@85ns 30mA to 20mA  
- Improve Ambient Temperature C/E to E/I  
(0°C~85°C/-25°C~85°C ® -25°C~85°C/-40°C~85°C)  
- Improve Maximum Absolute Ratings  
(Vdd : -0.3V to 3.3V ® -0.3V to 3.6V)  
- Improve tOE@85ns 30ns to 20ns  
Revised  
1.7  
Mar. 11. ‘ 02  
Final  
- Pin Description  
- Power Up & Deep Power Down Exit Sequence  
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not  
assume any responsibility for use of circuits described. No patent licenses are implied.  
Revision 1.7  
March. 2002  
1

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