5秒后页面跳转
HY64UD16162M PDF预览

HY64UD16162M

更新时间: 2024-11-11 03:02:27
品牌 Logo 应用领域
海力士 - HYNIX 静态存储器
页数 文件大小 规格书
11页 350K
描述
1M x 16 bit Low Low Power 1T/1C Pseudo SRAM

HY64UD16162M 数据手册

 浏览型号HY64UD16162M的Datasheet PDF文件第2页浏览型号HY64UD16162M的Datasheet PDF文件第3页浏览型号HY64UD16162M的Datasheet PDF文件第4页浏览型号HY64UD16162M的Datasheet PDF文件第5页浏览型号HY64UD16162M的Datasheet PDF文件第6页浏览型号HY64UD16162M的Datasheet PDF文件第7页 
HY64UD16162M Series  
Document Title  
1M x 16 bit Low Low Power 1T/1C Pseudo SRAM  
Revision history  
Revision No. History  
Draft Date Remark  
1.0  
1.1  
Initial  
Jan. 04. ’ 01  
Jul. 03. ’ 01  
Preliminary  
Preliminary  
Revised  
- Change Pin Connection  
- Improve tOE from 45ns to 30ns  
- Correct State Diagram  
1.2  
1.3  
Revised  
Jul.18. ’ 01  
Preliminary  
Preliminary  
- Correct Package Dimension  
- Change Absolute Maximum Ratings  
Revised  
Oct. 07. ‘ 01  
• DC Electrical Characteristics ( IDPD,ICC1)  
• State Diagram  
• Power Up Sequence  
• Deep Power Down Sequence  
• Read/Write Cycle Note  
1.4  
1.5  
Revised  
Nov. 14. ’ 01  
Dec. 20. ‘ 01  
Preliminary  
Preliminary  
• DC Electrical Characteristics ( ICC1: 3mA - > 5mA)  
Revised  
• Improve Standby Current ISB1 from 100uA to 80uA  
• Add 70ns Part  
• Power Up Sequence  
1.6  
Revised  
Feb. 27. ‘ 02  
Preliminary  
- Improve ISB1@70ns 100uA to 85uA  
- Improve ISB1@85ns 80uA to 75uA  
- Improve ICC2@70ns 30mA to 25mA  
- Improve ICC2@85ns 30mA to 20mA  
- Improve Ambient Temperature C/E to E/I  
(0°C~85°C/-25°C~85°C ® -25°C~85°C/-40°C~85°C)  
- Improve Maximum Absolute Ratings  
(Vdd : -0.3V to 3.3V ® -0.3V to 3.6V)  
- Improve tOE@85ns 30ns to 20ns  
1.7  
Revised  
Mar. 11. ‘ 02  
Final  
- Pin Description  
- Power Up & Deep Power Down Exit Sequence  
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not  
assume any responsibility for use of circuits described. No patent licenses are implied.  
Revision 1.7  
March. 2002  
1

与HY64UD16162M相关器件

型号 品牌 获取价格 描述 数据表
HY64UD16162M-DF70C ETC

获取价格

PSEUDO-STATIC RAM|1MX16|CMOS|BGA|48PIN|PLASTIC
HY64UD16162M-DF70E HYNIX

获取价格

1M x 16 bit Low Low Power 1T/1C Pseudo SRAM
HY64UD16162M-DF70I HYNIX

获取价格

1M x 16 bit Low Low Power 1T/1C Pseudo SRAM
HY64UD16162M-DF85C ETC

获取价格

PSEUDO-STATIC RAM|1MX16|CMOS|BGA|48PIN|PLASTIC
HY64UD16162M-DF85E HYNIX

获取价格

1M x 16 bit Low Low Power 1T/1C Pseudo SRAM
HY64UD16162M-DF85I HYNIX

获取价格

1M x 16 bit Low Low Power 1T/1C Pseudo SRAM
HY64UD16162M-E HYNIX

获取价格

1M x 16 bit Low Low Power 1T/1C Pseudo SRAM
HY64UD16162M-I HYNIX

获取价格

1M x 16 bit Low Low Power 1T/1C Pseudo SRAM
HY64UD16322A HYNIX

获取价格

2M x 16 bit Low Low Power 1T/1C Pseudo SRAM
HY64UD16322A-DF70E HYNIX

获取价格

2M x 16 bit Low Low Power 1T/1C Pseudo SRAM