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HUF75631SK8 PDF预览

HUF75631SK8

更新时间： 2024-11-13 22:10:23
品牌 Logo 应用领域
英特矽尔 - INTERSIL /
页数 文件大小 规格书
11页 358K
描述
5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET

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HUF75631SK8 数据手册

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HUF75631SK8  
Data Sheet  
October 1999  
File Number 4785  
5.5A, 100V, 0.039 Ohm, N-Channel,  
UltraFET Power MOSFET  
Packaging  
Features  
JEDEC MS-012AA  
• Ultra Low On-Resistance  
- r = 0.039Ω, VGS = 10V  
BRANDING DASH  
DS(ON)  
• Simulation Models  
®
©
- Temperature Compensated PSPICE and SABER  
Electrical Models  
5
©
- Spice and SABER Thermal Impedance Models  
1
2
3
4
- www.Intersil.com  
• Peak Current vs Pulse Width Curve  
• UIS Rating Curve  
Symbol  
Ordering Information  
SOURCE (1)  
SOURCE (2)  
SOURCE (3)  
GATE (4)  
DRAIN (8)  
DRAIN (7)  
DRAIN (6)  
DRAIN (5)  
PART NUMBER  
PACKAGE  
MS-012AA  
BRAND  
75631SK8  
HUF75631SK8  
NOTE: When ordering, use the entire part number. Add the suffix T  
to obtain the variant in tape and reel, e.g., HUF75631SK8T.  
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified  
A
HUF75631SK8  
UNITS  
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
100  
100  
20  
V
V
V
DSS  
Drain to Gate Voltage (R  
GS  
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
DGR  
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
GS  
Drain Current  
o
Continuous (T = 25 C, V  
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
5.5  
3.5  
A
A
A
GS  
D
D
o
Continuous (T = 100 C, V  
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
A
GS  
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I  
Figure 4  
DM  
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS  
Figures 6, 14, 15  
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P  
Derate Above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  
2.5  
20  
W
mW/ C  
D
o
o
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T  
J
-55 to 150  
C
STG  
Maximum Temperature for Soldering  
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T  
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T  
o
300  
260  
C
C
L
o
pkg  
NOTES:  
o
o
1. T = 25 C to 150 C.  
J
o
2
2
2. 50 C/W measured using FR-4 board with 0.76 in (490.3 mm ) copper pad at 10 second.  
o
2
2
3. 152 C/W measured using FR-4 board with 0.054 in (34.8 mm ) copper pad at 1000 seconds  
o
2
2
4. 189 C/W measured using FR-4 board with 0.0115 in (7.42 mm ) copper pad at 1000 seconds  
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the  
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.  
1
UltraFET™ is a trademark of Intersil Corporation. PSPICE™ is a registered trademark of MicroSim Corporation.  
©
SABER is a Copyright of Analogy Inc. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  
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HUF75631SK8 替代型号

型号 品牌 替代类型 描述 数据表
IRF7452TRPBF INFINEON

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IRF7452PBF INFINEON

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与HUF75631SK8相关器件

型号 品牌 获取价格 描述 数据表
HUF75631SK8T ROCHESTER

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 		5.5A, 100V, 0.039ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
HUF75631SK8T_NL FAIRCHILD

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 		Power Field-Effect Transistor, 5.5A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, M
HUF75631SK8T_NL ROCHESTER

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 		5.5A, 100V, 0.039ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
HUF75637P3 FAIRCHILD

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 		44A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET
HUF75637P3 INTERSIL

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 		44A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET
HUF75637P3_NL ROCHESTER

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 		44A, 100V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
HUF75637P3T ETC

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 		TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 44A I(D) | TO-220AB
HUF75637S3S FAIRCHILD

获取价格

 		44A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET
HUF75637S3S ROCHESTER

获取价格

 		44A, 100V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
HUF75637S3S INTERSIL

获取价格

 		44A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET

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