Datasheet > HUF75639P3-F102

HUF75639P3-F102

更新时间： 2024-09-26 11:13:07

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
15页	843K
描述
N 沟道，UltraFET 功率 MOSFET，100V，56A，25mΩ

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HUF75639P3-F102 数据手册

DATA SHEET

www.onsemi.com

MOSFET – Power, N-Channel,

Ultrafet

100 V, 56 A, 25 mW

HUF75639G3, HUF75639P3,

HUF75639S3S, HUF75639S3

These N−Channel power MOSFETs are manufactured using the

innovative Ultrafet process. This advanced process technology

achieves the lowest possible on− resistance per silicon area, resulting

in outstanding performance. This device is capable of withstanding

high energy in the avalanche mode and the diode exhibits very low

reverse recovery time and stored charge. It was designed for use in

applications where power efficiency is important, such as switching

regulators, switching converters, motor drivers, relay drivers,

low−voltage bus switches, and power management in portable and

battery− operated products.

TO−247−3LD

CASE 340CK

TO−220−3LD

CASE 340AT

D2PAK−3

CASE 418AJ

I2PAK

CASE 418AV

Formerly developmental type TA75639.

MARKING DIAGRAMS

Features

• 56 A, 100 V

• Simulation Models

♦ Temperature Compensated PSPICE and SABER™ Electrical

$Y&Z&3&K

75639G

$Y&Z&3&K

75639P

Models

♦ Spice and Saber Thermal Impedance Models

♦ www.onsemi.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

$Y&Z&3&K

75639S

$Y&Z&3&K

75639S

• Related Literature

♦ TB334, “Guidelines for Soldering Surface Mount Components to

PC Boards”

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

= onsemi Logo

75639x

= Assembly Plant Code

= 3−Digit Date Code

= 2−Digit Lot Traceability Code

= Specific Device Code

= G/P/S

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Publication Order Number:

February, 2023 − Rev. 5

HUF75639G3/D

12 3 4 5 6 7...15

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与HUF75639P3-F102相关器件

型号	品牌	获取价格	描述	数据表
HUF75639S3	FAIRCHILD	获取价格	56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs
HUF75639S3	ROCHESTER	获取价格	56A, 100V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
HUF75639S3	ONSEMI	获取价格	100 V、56 A、25 mΩ、N 沟道 UltraFET 功率 MOSFET
HUF75639S3_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Me
HUF75639S3_NL	ROCHESTER	获取价格	56A, 100V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
HUF75639S3R4851	FAIRCHILD	获取价格	56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET
HUF75639S3R4851	INTERSIL	获取价格	56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET
HUF75639S3S	INTERSIL	获取价格	56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs
HUF75639S3S	FAIRCHILD	获取价格	56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs
HUF75639S3S	ROCHESTER	获取价格	56A, 100V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB