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HUF75639S3S_NL PDF预览

HUF75639S3S_NL

更新时间： 2024-11-13 13:08:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关
页数 文件大小 规格书
10页 229K
描述
Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE PACKAGE-3

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HUF75639S3S_NL 技术参数

生命周期：Obsolete零件包装代码：D2PAK
包装说明：SMALL OUTLINE, R-PSSO-G2针数：3
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.64Is Samacsys：N
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：100 V最大漏极电流 (ID)：56 A
最大漏源导通电阻：0.025 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-263ABJESD-30 代码：R-PSSO-G2
JESD-609代码：e3元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
认证状态：Not Qualified表面贴装：YES
端子面层：MATTE TIN端子形式：GULL WING
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

HUF75639S3S_NL 数据手册

 浏览型号HUF75639S3S_NL的Datasheet PDF文件第2页浏览型号HUF75639S3S_NL的Datasheet PDF文件第3页浏览型号HUF75639S3S_NL的Datasheet PDF文件第4页浏览型号HUF75639S3S_NL的Datasheet PDF文件第5页浏览型号HUF75639S3S_NL的Datasheet PDF文件第6页浏览型号HUF75639S3S_NL的Datasheet PDF文件第7页 
HUF75639G3, HUF75639P3, HUF75639S3S,  
HUF75639S3  
Data Sheet  
December 2001  
56A, 100V, 0.025 Ohm, N-Channel  
UltraFET Power MOSFETs  
Features  
• 56A, 100V  
These N-Channel power MOSFETs  
are manufactured using the  
innovative UltraFET® process. This  
• Simulation Models  
- Temperature Compensated PSPICE® and SABER™  
Electrical Models  
advanced process technology  
- Spice and Saber Thermal Impedance Models  
- www.fairchildsemi.com  
achieves the lowest possible on-resistance per silicon area,  
resulting in outstanding performance. This device is capable  
of withstanding high energy in the avalanche mode and the  
diode exhibits very low reverse recovery time and stored  
charge. It was designed for use in applications where power  
efficiency is important, such as switching regulators,  
switching converters, motor drivers, relay drivers, low-  
voltage bus switches, and power management in portable  
and battery-operated products.  
• Peak Current vs Pulse Width Curve  
• UIS Rating Curve  
• Related Literature  
- TB334, “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
Symbol  
Formerly developmental type TA75639.  
D
Ordering Information  
PART NUMBER  
HUF75639G3  
HUF75639P3  
PACKAGE  
BRAND  
75639G  
G
TO-247  
TO-220AB  
TO-263AB  
TO-262AA  
75639P  
75639S  
75639S  
S
HUF75639S3S  
HUF75639S3  
NOTE: When ordering, use the entire part number. Add the suffix T to  
obtain the TO-263AB variant in tape and reel, e.g., HUF75639S3ST.  
Packaging  
JEDEC STYLE TO-247  
JEDEC TO-220AB  
SOURCE  
DRAIN  
GATE  
SOURCE  
DRAIN  
GATE  
DRAIN  
(FLANGE)  
DRAIN  
(TAB)  
JEDEC TO-263AB  
TO-262AA  
SOURCE  
DRAIN  
GATE  
DRAIN  
GATE  
(FLANGE)  
SOURCE  
DRAIN  
(TAB)  
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html  
For severe environments, see our Automotive HUFA series.  
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.  
©2001 Fairchild Semiconductor Corporation  
HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Rev. B  
1234567...10

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与HUF75639S3S_NL相关器件

型号 品牌 获取价格 描述 数据表
HUF75639S3ST FAIRCHILD

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 		56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs
HUF75639S3ST ROCHESTER

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 		56A, 100V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
HUF75639S3ST ONSEMI

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 		N 沟道，UltraFET 功率 MOSFET，100V，56A，25mΩ
HUF75639S3ST_NL ROCHESTER

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 		56A, 100V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
HUF75639S3ST_NL FAIRCHILD

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 		Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Me
HUF75645P3 FAIRCHILD

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 		75A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs
HUF75645P3 INTERSIL

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 		75A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs
HUF75645P3 ROCHESTER

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 		75A, 100V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
HUF75645P3 ONSEMI

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 		N 沟道，UltraFET Power MOSFET，100V，75A，14mΩ
HUF75645P3_NL FAIRCHILD

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 		Power Field-Effect Transistor, 75A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Me

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