Datasheet > HUF75829D3

HUF75829D3

更新时间： 2024-09-24 22:48:27

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关
页数	文件大小	规格书
9页	125K
描述
18A, 150V, 0.110 Ohm, N-Channel, UltraFET Power MOSFET

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HUF75829D3 数据手册

HUF75829D3, HUF75829D3S

Data Sheet

February 2000

File Number 4795.1

18A, 150V, 0.110 Ohm, N-Channel,

UltraFET Power MOSFET

Packaging

Features

JEDEC TO-251AA

JEDEC TO-252AA

• Ultra Low On-Resistance

- r = 0.110Ω, V_GS= 10V

DS(ON)

• Simulation Models

DRAIN

(FLANGE)

SOURCE

DRAIN

GATE

- Temperature Compensated PSPICE and SABER

Electrical Models

GATE

SOURCE

- Spice and SABER Thermal Impedance Models

DRAIN

(FLANGE)

- www.intersil.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

HUF75829D3S

HUF75829D3

Ordering Information

Symbol

PART NUMBER

HUF75829D3

PACKAGE

TO-251AA

TO-252AA

BRAND

75829D

HUF75829D3S

NOTE: When ordering, use the entire part number. Add the sufﬁx T

to obtain the variant in tape and reel, e.g., HUF75829D3ST.

Absolute Maximum Ratings

T = 25 C, Unless Otherwise Specified

HUF75829D3, HUF75829D3S

UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

150

±20

DSS

Drain to Gate Voltage (R

= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Current

Continuous (T = 25 C, V

= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (T = 100 C, V

= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Figure 4

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS

Figures 6, 14, 15

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

110

0.73

W/ C

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T

-55 to 175

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

300

260

pkg

NOTES:

1. T = 25 C to 150 C.

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.

UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.

12 3 4 5 6 7...9

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与HUF75829D3相关器件

型号	品牌	获取价格	描述	数据表
HUF75829D3S	FAIRCHILD	获取价格	18A, 150V, 0.110 Ohm, N-Channel, UltraFET Power MOSFET
HUF75829D3S	INTERSIL	获取价格	18A, 150V, 0.110 Ohm, N-Channel, UltraFET Power MOSFET
HUF75829D3S	ROCHESTER	获取价格	18A, 150V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
HUF75829D3ST	ROCHESTER	获取价格	18A, 150V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
HUF75829D3ST	FAIRCHILD	获取价格	Power Field-Effect Transistor, 18A I(D), 150V, 0.11ohm, 1-Element, N-Channel, Silicon, Met
HUF75829D3ST	RENESAS	获取价格	18A, 150V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
HUF75831SK8	FAIRCHILD	获取价格	3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET
HUF75831SK8	INTERSIL	获取价格	3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET
HUF75831SK8T	FAIRCHILD	获取价格	3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET
HUF75842P3	FAIRCHILD	获取价格	43A, 150V, 0.042 Ohm, N-Channel, UltraFET Power MOSFET

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