HUF75842S3S_NL

更新时间： 2024-09-16 13:08:27

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管功率场效应晶体管开关
页数	文件大小	规格书
10页	198K
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数据手册

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HUF75842S3S_NL 数据手册

HUF75842P3, HUF75842S3S

Data Sheet

December 2001

43A, 150V, 0.042 Ohm, N-Channel,

UltraFET® Power MOSFET

Packaging

JEDEC TO-220AB

JEDEC TO-263AB

Features

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

• Ultra Low On-Resistance

- r = 0.042Ω, V_GS= 10V

DS(ON)

GATE

• Simulation Models

SOURCE

- Temperature Compensated PSPICE® and SABER™

Electrical Models

DRAIN

(FLANGE)

- Spice and SABER Thermal Impedance Models

- www.fairchildsemi.com

HUF75842P3

HUF75842S3S

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

Symbol

Ordering Information

PART NUMBER

HUF75842P3

PACKAGE

TO-220AB

TO-263AB

BRAND

75842P

75842S

HUF75842S3S

NOTE: When ordering, use the entire part number. Add the suffix T

to obtain the variant in tape and reel, e.g., HUF75842S3ST.

Absolute Maximum Ratings

T = 25 C, Unless Otherwise Specified

HUF75842P3

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

150

±20

DSS

Drain to Gate Voltage (R

= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Current

Continuous (T = 25 C, V

= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (T = 100 C, V

= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Figure 4

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS

Figures 6, 14, 15

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

230

1.53

W/ C

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T

-55 to 175

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

300

260

pkg

NOTES:

1. T = 25 C to 150 C.

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html

For severe environments, see our Automotive HUFA series.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

HUF75842P3, HUF75842S3S Rev. B

12 3 4 5 6 7...10

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与HUF75842S3S_NL相关器件

型号	品牌	获取价格	描述	数据表
HUF75842S3ST	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 150V V(BR)DSS \| 43A I(D) \| TO-263AB
HUF75852G3	FAIRCHILD	获取价格	75A, 150V, 0.016 Ohm, N-Channel, UltraFET Power MOSFET
HUF75852G3	INTERSIL	获取价格	75A, 150V, 0.016 Ohm, N-Channel, UltraFET Power MOSFET
HUF75852G3	ONSEMI	获取价格	N 沟道，UltraFET 功率 MOSFET，150V，75A，16mΩ
HUF75925D3ST	FAIRCHILD	获取价格	11A, 200V, 0.275 Ohm, N-Channel, UltraFET Power MOSFETs
HUF75925P3	FAIRCHILD	获取价格	11A, 200V, 0.275 Ohm, N-Channel, UltraFET Power MOSFETs
HUF75939P3	FAIRCHILD	获取价格	22A, 200V, 0.125 Ohm, N-Channel, UltraFET Power MOSFET
HUF75939S3ST	FAIRCHILD	获取价格	22A, 200V, 0.125 Ohm, N-Channel, UltraFET Power MOSFET
HUF75945G3	FAIRCHILD	获取价格	38A, 200V, 0.071 Ohm, N-Channel, UltraFET Power MOSFETs
HUF75945P3	FAIRCHILD	获取价格	38A, 200V, 0.071 Ohm, N-Channel, UltraFET Power MOSFETs

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