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HUF76013D3S

更新时间： 2024-11-24 22:31:35
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英特矽尔 - INTERSIL /
页数 文件大小 规格书
11页 239K
描述
20A, 20V, 0.022 Ohm, N-Channel, Logic Level Power MOSFETs

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HUF76013D3S 数据手册

 浏览型号HUF76013D3S的Datasheet PDF文件第2页浏览型号HUF76013D3S的Datasheet PDF文件第3页浏览型号HUF76013D3S的Datasheet PDF文件第4页浏览型号HUF76013D3S的Datasheet PDF文件第5页浏览型号HUF76013D3S的Datasheet PDF文件第6页浏览型号HUF76013D3S的Datasheet PDF文件第7页 
HUF76013P3, HUF76013D3S  
TM  
Data Sheet  
April 2000  
File Number 4849  
20A, 20V, 0.022 Ohm, N-Channel, Logic  
Level Power MOSFETs  
The HUF76013 is an application-specific MOSFET  
optimized for switching when used as the upper switch in  
synchronous buck applications. The low gate charge and low  
input capacitance results in lower driver and lower switching  
losses thereby increasing the overall system efficiency.  
Features  
• 20A, 20V  
- r  
- r  
= 0.022Ω, V = 10V  
DS(ON)  
DS(ON)  
GS  
= 0.030Ω, V = 5V  
Symbol  
GS  
D
• PWM Optimized for Synchronous Buck Applications  
• Fast Switching  
G
• Low Gate Charge  
- Q Total 14nC (Typ)  
g
S
• Low Capacitance  
- C  
- C  
624pF (Typ)  
ISS  
Packaging  
71pF (Typ)  
RSS  
HUF76013D3S  
HUF76013P3  
JEDEC TO-252AA  
JEDEC TO-220AB  
Ordering Information  
SOURCE  
DRAIN  
GATE  
DRAIN (FLANGE)  
PART NUMBER  
PACKAGE  
BRAND  
76013P  
76013D  
HUF76013P3  
TO-220AB  
TO-252AA  
GATE  
SOURCE  
HUF76013D3S  
DRAIN  
(FLANGE)  
NOTE: When ordering, use the entire part number. Add the suffix T to  
obtain the HUF76013D3S in tape and reel, e.g., HUF76013D3ST.  
o
Absolute Maximum Ratings  
T
= 25 C, Unless Otherwise Specified  
C
HUF76013P3,  
SYMBOL  
PARAMETER  
HUF76013D3S  
UNITS  
V
Drain to Source Voltage (Note 1)  
20  
20  
V
V
V
DSS  
V
Drain to Gate Voltage (R = 20kΩ) (Note 1)  
GS  
DGR  
V
Gate to Source Voltage  
±16  
GS  
Drain Current  
o
I
I
Continuous (T = 25 C, V = 10V) (Figure 2)  
GS  
20  
20  
Figure 4  
A
A
A
D
D
C
o
Continuous (T = 100 C, V  
= 5V)  
C
GS  
I
Pulsed Drain Current  
Power Dissipation  
DM  
P
50  
0.4  
W
D
o
o
Derate Above 25 C  
W/ C  
o
T , T  
STG  
Operating and Storage Temperature  
-55 to 150  
C
J
Maximum Temperature for Soldering  
o
T
T
Leads at 0.063in (1.6mm) from Case for 10s  
Package Body for 10s, See Techbrief TB334  
300  
260  
C
C
L
o
pkg  
THERMAL SPECIFICATIONS  
o
R
R
Thermal Resistance Junction to Case, TO-220, TO-252  
Thermal Resistance Junction to Ambient TO-220  
Thermal Resistance Junction to Ambient TO-252  
2.5  
62  
C/W  
θJC  
o
C/W  
θJA  
o
100  
C/W  
NOTE:  
o
o
1. T = 25 C to 125 C.  
J
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the  
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
1
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000  
UltraFET® is a registered trademark of Intersil Corporation.  
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HUF76013D3S 替代型号

型号 品牌 替代类型 描述 数据表
FDD6512A FAIRCHILD

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 		20A, 20V, 0.022 Ohm, N-Channel, Logic Level Power MOSFETs
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 		20A, 20V, 0.022 Ohm, N-Channel, Logic Level Power MOSFETs
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HUF76105DK8 FAIRCHILD

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 		5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET
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