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HUF76107D3ST PDF预览

HUF76107D3ST

更新时间: 2024-11-09 13:08:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关
页数 文件大小 规格书
11页 277K
描述
Power Field-Effect Transistor, 20A I(D), 30V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN

HUF76107D3ST 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:TO-252AA包装说明:TO-252AA, 3 PIN
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.12
Is Samacsys:N外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):20 A最大漏极电流 (ID):20 A
最大漏源导通电阻:0.08 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):35 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

HUF76107D3ST 数据手册

 浏览型号HUF76107D3ST的Datasheet PDF文件第2页浏览型号HUF76107D3ST的Datasheet PDF文件第3页浏览型号HUF76107D3ST的Datasheet PDF文件第4页浏览型号HUF76107D3ST的Datasheet PDF文件第5页浏览型号HUF76107D3ST的Datasheet PDF文件第6页浏览型号HUF76107D3ST的Datasheet PDF文件第7页 
HUF76107D3, HUF76107D3S  
Data Sheet  
January 2003  
20A, 30V, 0.052 Ohm, N-Channel, Logic  
Level UltraFET Power MOSFETs  
Features  
• Logic Level Gate Drive  
• 20A, 30V  
These N-Channel power  
MOSFETs are manufactured using  
• Ultra Low On-Resistance, r  
= 0.052Ω  
the innovative UltraFET™ process.  
DS(ON)  
®
This advanced process technology  
Temperature Compensating PSPICE Model  
achieves the lowest possible on-resistance per silicon area,  
resulting in outstanding performance. This device is  
capable of withstanding high energy in the avalanche mode  
and the diode exhibits very low reverse recovery time and  
stored charge. It was designed for use in applications  
where power efficiency is important, such as switching  
regulators, switching converters, motor drivers, relay  
drivers, low voltage bus switches, and power management  
in portable and battery operated products.  
©
Temperature Compensating SABER Model  
• Thermal Impedance SPICE Model  
• Thermal Impedance SABER Model  
• Peak Current vs Pulse Width Curve  
• UIS Rating Curve  
• Related Literature  
- TB334, “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
Formerly developmental type TA76107.  
Ordering Information  
Symbol  
PART NUMBER  
PACKAGE  
TO-251AA  
TO-252AA  
BRAND  
76107D  
76107D  
D
HUF76107D3  
HUF76107D3S  
G
NOTE: When ordering, use the entire part number. Add the suffix T to  
obtain the TO-252AA variant in tape and reel, e.g., HUF76107D3ST.  
S
Packaging  
JEDEC TO-251AA  
JEDEC TO-252AA  
SOURCE  
DRAIN  
DRAIN  
(FLANGE)  
DRAIN  
GATE  
GATE  
(FLANGE)  
SOURCE  
©2003 Fairchild Semiconductor Corporation  
HUF76107D3, HUF76107D3S Rev. B1  

HUF76107D3ST 替代型号

型号 品牌 替代类型 描述 数据表
HUF76107D3S FAIRCHILD

类似代替

20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76107D3ST_NL FAIRCHILD

功能相似

Power Field-Effect Transistor, 20A I(D), 30V, 0.08ohm, 1-Element, N-Channel, Silicon, Meta

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